國立虎尾科技大學 |

Growth and characterization of indium gallium nitride/gallium nitride quantum well and quantum dot light emitting diodes and lasers.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Growth and characterization of indium gallium nitride/gallium nitride quantum well and quantum dot light emitting diodes and lasers./
作者:	Zhang, Meng.
面頁冊數:	139 p.
附註:	Source: Dissertation Abstracts International, Volume: 72-12, Section: B, page: 7602.
Contained By:	Dissertation Abstracts International72-12B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3476833
ISBN:	9781124921259

Growth and characterization of indium gallium nitride/gallium nitride quantum well and quantum dot light emitting diodes and lasers.
Zhang, Meng.

Growth and characterization of indium gallium nitride/gallium nitride quantum well and quantum dot light emitting diodes and lasers. - 139 p.

Source: Dissertation Abstracts International, Volume: 72-12, Section: B, page: 7602.

Thesis (Ph.D.)--University of Michigan, 2011.

InGaN/GaN quantum dots (QDs) are theoretically predicted to have reduced density of dislocations' smaller polarization field, and larger electron-hole overlap, which make them potentially useful for realizing high performance light emitters. The objective of this doctoral research was to study the growth and characterization of InGaN/GaN QDs, investigate the role of nonradiative Auger recombination in the "efficiency droop" of quantum dot LEDs, and design and characterize high performance green InGaN/GaN QD LEDs and lasers. We have also investigated the role of interface roughness in InGaN/GaN multi-quantum wells and this parameter has been correlated with the quantum efficiency.

ISBN: 9781124921259Subjects--Topical Terms:

845382
Engineering, Electronics and Electrical.

Growth and characterization of indium gallium nitride/gallium nitride quantum well and quantum dot light emitting diodes and lasers.
LDR:03316nam 2200313 4500 001 712948
005 20121003100311.5
008 121101s2011 ||||||||||||||||| ||eng d
020 $a 9781124921259
035 $a (UMI)AAI3476833
035 $a AAI3476833
040 $a UMI $c UMI
100 1 $a Zhang, Meng. $3 845462
245 1 0 $a Growth and characterization of indium gallium nitride/gallium nitride quantum well and quantum dot light emitting diodes and lasers.
300 $a 139 p.
500 $a Source: Dissertation Abstracts International, Volume: 72-12, Section: B, page: 7602.
500 $a Adviser: Pallab Bhattacharya.
502 $a Thesis (Ph.D.)--University of Michigan, 2011.
520 $a InGaN/GaN quantum dots (QDs) are theoretically predicted to have reduced density of dislocations' smaller polarization field, and larger electron-hole overlap, which make them potentially useful for realizing high performance light emitters. The objective of this doctoral research was to study the growth and characterization of InGaN/GaN QDs, investigate the role of nonradiative Auger recombination in the "efficiency droop" of quantum dot LEDs, and design and characterize high performance green InGaN/GaN QD LEDs and lasers. We have also investigated the role of interface roughness in InGaN/GaN multi-quantum wells and this parameter has been correlated with the quantum efficiency.
520 $a Reproducible high-level p-type doping of GaN, which has always been a shortcoming, has been demonstrated under N-rich growth conditions, with the highest doping level of 2.1x1018 cm-3. Self-organized InGaN/GaN QDs with a dot density of 2-5x1010 cm-2 have been grown and characterized. Subsequently, we have demonstrated InGaN/GaN QD LEDs with a very small blue shift (4.8 nm) of the peak emission with increasing injection, and a reduced efficiency droop. Furthermore, we have demonstrated hole tunnel injection InGaN/GaN QD LEDs, for the first time, which effectively minimizes hot carriers and ensures uniform injection of holes in all the QD layers. The current density at maximum efficiency is 201.2A/cm2, compared to &sim;20 A/cm2 for MQW LEDs. Finally, we have characterized the Auger recombination process in InGaN/GaN QWs, QDs, and defect-free nanowires (NWs). The origin of the abnormally high Auger recombination in the nitride heterostructures is attributed to defect related Auger recombination. The Auger coefficient is low, as predicted (C a= 4.1x10-33cm6·s -1), in the defect-free nanowires and LEDs made with these nanowires do not exhibit any efficiency droop upto injection levels of 400A/cm 2.
520 $a The first InGaN/GaN quantum dot lasers emitting in the green have also been demonstrated using focused ion beam etching to create the laser facets (mirrors). Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and &sim;1.1%, respectively.
590 $a School code: 0127.
650 4 $a Engineering, Electronics and Electrical. $3 845382
650 4 $a Nanotechnology. $3 557660
650 4 $a Energy. $3 784773
690 $a 0544
690 $a 0652
690 $a 0791
710 2 $a University of Michigan. $3 845400
773 0 $t Dissertation Abstracts International $g 72-12B.
790 1 0 $a Bhattacharya, Pallab, $e advisor
790 $a 0127
791 $a Ph.D.
792 $a 2011
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3476833