國立虎尾科技大學 |

Electronic Properties and Structure of Functionalized Graphene.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Electronic Properties and Structure of Functionalized Graphene./
Author:	Plachinda, Pavel.
Description:	254 p.
Notes:	Source: Dissertation Abstracts International, Volume: 73-07, Section: B, page: .
Contained By:	Dissertation Abstracts International73-07B.
Subject:	Nanoscience. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3502649
ISBN:	9781267258540

Electronic Properties and Structure of Functionalized Graphene.
Plachinda, Pavel.

Electronic Properties and Structure of Functionalized Graphene. - 254 p.

Source: Dissertation Abstracts International, Volume: 73-07, Section: B, page: .

Thesis (Ph.D.)--Portland State University, 2012.

The trend over the last 50 years of down-scaling the silicon transistor to achieve faster computations has led to doubling of the number of transistors and computation speed over about every two years. However, this trend cannot be maintained due to the fundamental limitations of silicon as the main material for the semiconducting industry. Therefore, there is an active search for exploration of alternate materials. Among the possible candidates that can may be able to replace silicon is graphene which has recently gained the most attention. Unique properties of graphene include exceedingly high carrier mobility, tunable band gap, huge optical density of a monolayer, anomalous quantum Hall effect, and many others. To be suitable for microelectronic applications the material should be semiconductive, i.e. have a non-zero band gap. Pristine graphene is a semimetal, but by the virtue of doping the graphene surface with different molecules and radicals a band gap can be opened. Because the electronic properties of all materials are intimately related to their atomic structure, characterization of molecular and electronic structure of functionalizing groups is of high interest. The ab-inito (from the first principles) calculations provide a unique opportunity to study the influence of the dopants and thus allow exploration of the physical phenomena in functionalized graphene structures. This ability paves the road to probe the properties based on the intuitive structural information only. A great advantage of this approach lies in the opportunity for quick screening of various atomic structures. We conducted a series of ab-inito investigations of graphene functionalized with covalently and hapticly bound groups, and demonstrated possible practical usage of functionalized graphene for microelectronic and optical applications. This investigation showed that it is possible produce band gaps in graphene (i.e., produce semiconducting graphene) of about 1 eV, without degrading the carrier mobility. This was archived by considering the influence of those adducts on electronic band structure and conductivity properties.

ISBN: 9781267258540Subjects--Topical Terms:

632473
Nanoscience.

Electronic Properties and Structure of Functionalized Graphene.
LDR:03232nam 2200337 4500 001 713000
005 20121003100335.5
008 121101s2012 ||||||||||||||||| ||eng d
020 $a 9781267258540
035 $a (UMI)AAI3502649
035 $a AAI3502649
040 $a UMI $c UMI
100 1 $a Plachinda, Pavel. $3 845571
245 1 0 $a Electronic Properties and Structure of Functionalized Graphene.
300 $a 254 p.
500 $a Source: Dissertation Abstracts International, Volume: 73-07, Section: B, page: .
500 $a Adviser: Raj Solanki.
502 $a Thesis (Ph.D.)--Portland State University, 2012.
520 $a The trend over the last 50 years of down-scaling the silicon transistor to achieve faster computations has led to doubling of the number of transistors and computation speed over about every two years. However, this trend cannot be maintained due to the fundamental limitations of silicon as the main material for the semiconducting industry. Therefore, there is an active search for exploration of alternate materials. Among the possible candidates that can may be able to replace silicon is graphene which has recently gained the most attention. Unique properties of graphene include exceedingly high carrier mobility, tunable band gap, huge optical density of a monolayer, anomalous quantum Hall effect, and many others. To be suitable for microelectronic applications the material should be semiconductive, i.e. have a non-zero band gap. Pristine graphene is a semimetal, but by the virtue of doping the graphene surface with different molecules and radicals a band gap can be opened. Because the electronic properties of all materials are intimately related to their atomic structure, characterization of molecular and electronic structure of functionalizing groups is of high interest. The ab-inito (from the first principles) calculations provide a unique opportunity to study the influence of the dopants and thus allow exploration of the physical phenomena in functionalized graphene structures. This ability paves the road to probe the properties based on the intuitive structural information only. A great advantage of this approach lies in the opportunity for quick screening of various atomic structures. We conducted a series of ab-inito investigations of graphene functionalized with covalently and hapticly bound groups, and demonstrated possible practical usage of functionalized graphene for microelectronic and optical applications. This investigation showed that it is possible produce band gaps in graphene (i.e., produce semiconducting graphene) of about 1 eV, without degrading the carrier mobility. This was archived by considering the influence of those adducts on electronic band structure and conductivity properties.
590 $a School code: 0180.
650 4 $a Nanoscience. $3 632473
650 4 $a Physics, Condensed Matter. $3 845468
650 4 $a Engineering, Materials Science. $3 845422
690 $a 0565
690 $a 0611
690 $a 0794
710 2 $a Portland State University. $b Physics. $3 845572
773 0 $t Dissertation Abstracts International $g 73-07B.
790 1 0 $a Solanki, Raj, $e advisor
790 1 0 $a Freeouf, John $e committee member
790 1 0 $a Konenkamp, Rolf $e committee member
790 1 0 $a Morris, James $e committee member
790 1 0 $a Rouvimov, Sergei $e committee member
790 $a 0180
791 $a Ph.D.
792 $a 2012
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3502649