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Resolution enhancement techniques in...
~
Society of Photo-optical Instrumentation Engineers.
Resolution enhancement techniques in optical lithography
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Resolution enhancement techniques in optical lithography/ Alfred Kwok-Kit Wong.
作者:
Wong, Alfred Kwok-Kit.
出版者:
Bellingham, Wash. (1000 20th St. Bellingham WA 98225-6705 USA) :SPIE, : 2001.,
面頁冊數:
1 online resource (xvii, 214 p. : ill.) :digital file. :
附註:
"SPIE digital library."
標題:
Integrated circuits - Design and construction. -
電子資源:
http://dx.doi.org/10.1117/3.401208
ISBN:
9780819478818 (electronic)
Resolution enhancement techniques in optical lithography
Wong, Alfred Kwok-Kit.
Resolution enhancement techniques in optical lithography
[electronic resource] /Alfred Kwok-Kit Wong. - Bellingham, Wash. (1000 20th St. Bellingham WA 98225-6705 USA) :SPIE,2001. - 1 online resource (xvii, 214 p. : ill.) :digital file. - Tutorial texts in optical engineering ;v. TT 47. - SPIE tutorial texts ;TT06..
"SPIE digital library."
Includes bibliographical references (p. 189-208) and index.
Foreword -- Preface-- List of symbols -- 1. Introduction. 1.1 Brief history of printing and lithography. 1.2 Optical lithography and integrated circuits. 1.3 Basics of optical lithography. 1.4 Requirements of microlithography. 1.5 Nonoptical microlithography techniques. 1.6 Current challenges of optical microlithography. 1.7 Three parameters affecting resolution. 1.8 Scope of discussion -- 2. Optical imaging and resolution. 2.1 Coherent imaging. 2.2 Mask spectrum. 2.3 Partially coherent imaging. 2.4 Complex degree of coherence. 2.5 Rayleigh's resolution limit. 2.6 Lithography resolution limit. 2.7 Quantification of image quality. -- 3. Modified illumination. 3.1 Partial coherence factor. 3.2 Off-axis illumination. 3.3 General guidelines -- 4. Optical proximity correction. 4.1 Image distortion. 4.2 Optical proximity correction approaches. 4.3 Numerical techniques. 4.4 Implementation. 4.5 Discussion -- 5. Alternating phase-shifting mask. 5.1 Principle. 5.2 Mask making process. 5.3 Issues. 5.4 Implementation. 5.5 Summary -- 6. Attenuated phase-shift mask. 6.1 Principle. 6.2 Mask making. 6.3 Discussion -- 7. Selecting appropriate RETs. 7.1 Critical levels. 7.2 Methodology. 7.3 Optimization results. 7.4 Summary and discussion -- 8 Second-Generation RETs. 8.1 Multiple exposure. 8.2 Pupil filtering. 8.3 Advanced illumination scheme. 8.4 Compensating process. 8.5 Mask and photoresist tone -- Concluding remarks -- k1 conversion charts -- Bibliography -- Index.
Restricted to subscribers or individual electronic text purchasers.
Ever-smaller IC devices are pushing the optical lithography envelope, increasing the importance of resolution enhancement techniques. This tutorial encompasses two decades of research. It discusses theoretical and practical aspects of commonly used techniques, including optical imaging and resolution, modified illumination, optical proximity correction, alternating and attenuating phase-shifting masks, selecting RETs, and second-generation RETs. Useful for students and practicing lithographers.
System requirements: Adobe Acrobat Reader.
ISBN: 9780819478818 (electronic)
Standard No.: 10.1117/3.401208doiSubjects--Topical Terms:
561265
Integrated circuits
--Design and construction.
LC Class. No.: TK7874 / .W647 2001e
Dewey Class. No.: 621.3815/31
Resolution enhancement techniques in optical lithography
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Bellingham, Wash. (1000 20th St. Bellingham WA 98225-6705 USA) :
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2001.
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Foreword -- Preface-- List of symbols -- 1. Introduction. 1.1 Brief history of printing and lithography. 1.2 Optical lithography and integrated circuits. 1.3 Basics of optical lithography. 1.4 Requirements of microlithography. 1.5 Nonoptical microlithography techniques. 1.6 Current challenges of optical microlithography. 1.7 Three parameters affecting resolution. 1.8 Scope of discussion -- 2. Optical imaging and resolution. 2.1 Coherent imaging. 2.2 Mask spectrum. 2.3 Partially coherent imaging. 2.4 Complex degree of coherence. 2.5 Rayleigh's resolution limit. 2.6 Lithography resolution limit. 2.7 Quantification of image quality. -- 3. Modified illumination. 3.1 Partial coherence factor. 3.2 Off-axis illumination. 3.3 General guidelines -- 4. Optical proximity correction. 4.1 Image distortion. 4.2 Optical proximity correction approaches. 4.3 Numerical techniques. 4.4 Implementation. 4.5 Discussion -- 5. Alternating phase-shifting mask. 5.1 Principle. 5.2 Mask making process. 5.3 Issues. 5.4 Implementation. 5.5 Summary -- 6. Attenuated phase-shift mask. 6.1 Principle. 6.2 Mask making. 6.3 Discussion -- 7. Selecting appropriate RETs. 7.1 Critical levels. 7.2 Methodology. 7.3 Optimization results. 7.4 Summary and discussion -- 8 Second-Generation RETs. 8.1 Multiple exposure. 8.2 Pupil filtering. 8.3 Advanced illumination scheme. 8.4 Compensating process. 8.5 Mask and photoresist tone -- Concluding remarks -- k1 conversion charts -- Bibliography -- Index.
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Restricted to subscribers or individual electronic text purchasers.
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$a
Ever-smaller IC devices are pushing the optical lithography envelope, increasing the importance of resolution enhancement techniques. This tutorial encompasses two decades of research. It discusses theoretical and practical aspects of commonly used techniques, including optical imaging and resolution, modified illumination, optical proximity correction, alternating and attenuating phase-shifting masks, selecting RETs, and second-generation RETs. Useful for students and practicing lithographers.
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http://dx.doi.org/10.1117/3.401208
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