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Technology computer aided design : =...

Sarkar, Chandan Kumar.

Technology computer aided design : = simulation for VLSI MOSFET /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Technology computer aided design :/ edited by Chandan Kumar Sarkar.
Reminder of title:	simulation for VLSI MOSFET /
other author:	Sarkar, Chandan Kumar.
Published:	Boca Raton :CRC Press, Taylor & Francis Group, : c2013.,
Description:	xv, 430 p., [15] p. of plates :ill. (some col.) ; : 24 cm.;
Subject:	Integrated circuits - Very large scale integration -
ISBN:	1466512652 (cloth) :

Technology computer aided design : = simulation for VLSI MOSFET /
Technology computer aided design :simulation for VLSI MOSFET /edited by Chandan Kumar Sarkar. - Boca Raton :CRC Press, Taylor & Francis Group,c2013. - xv, 430 p., [15] p. of plates :ill. (some col.) ;24 cm.

Includes bibliographical references and index.

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--

ISBN: 1466512652 (cloth) :NT5350

LCCN: 2013008022Subjects--Topical Terms:

682287
Integrated circuits
--Very large scale integration

LC Class. No.: TK7874.75 / .T43 2013

Dewey Class. No.: 621.39/50285

Technology computer aided design : = simulation for VLSI MOSFET /
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020 $a 1466512652 (cloth) : $c NT5350
020 $a 9781466512658 (cloth)
040 $a DLC $b eng $c NFU $d DLC
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050 0 0 $a TK7874.75 $b .T43 2013
082 0 0 $a 621.39/50285 $2 23
245 0 0 $a Technology computer aided design : $b simulation for VLSI MOSFET / $c edited by Chandan Kumar Sarkar.
260 # $a Boca Raton : $b CRC Press, Taylor & Francis Group, $c c2013.
300 $a xv, 430 p., [15] p. of plates : $b ill. (some col.) ; $c 24 cm.
504 $a Includes bibliographical references and index.
520 # $a "MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- $c Provided by publisher.
650 # 0 $a Integrated circuits $x Very large scale integration $x Computer-aided design. $3 682287
650 # 0 $a Metal oxide semiconductor field-effect transistors $x Computer-aided design. $3 1051547
700 1 # $a Sarkar, Chandan Kumar. $3 1051546