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Technology computer aided design : =...

Sarkar, Chandan Kumar.

Technology computer aided design : = simulation for VLSI MOSFET /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Technology computer aided design :/ edited by Chandan Kumar Sarkar.
其他題名:	simulation for VLSI MOSFET /
其他作者:	Sarkar, Chandan Kumar.
出版者:	Boca Raton :CRC Press, Taylor & Francis Group, : c2013.,
面頁冊數:	xv, 430 p., [15] p. of plates :ill. (some col.) ; : 24 cm.;
標題:	Integrated circuits - Very large scale integration -
ISBN:	1466512652 (cloth) :

Technology computer aided design : = simulation for VLSI MOSFET /
Technology computer aided design :simulation for VLSI MOSFET /edited by Chandan Kumar Sarkar. - Boca Raton :CRC Press, Taylor & Francis Group,c2013. - xv, 430 p., [15] p. of plates :ill. (some col.) ;24 cm.

Includes bibliographical references and index.

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--

ISBN: 1466512652 (cloth) :NT5350

LCCN: 2013008022Subjects--Topical Terms:

682287
Integrated circuits
--Very large scale integration

LC Class. No.: TK7874.75 / .T43 2013

Dewey Class. No.: 621.39/50285

Technology computer aided design : = simulation for VLSI MOSFET /
LDR:01289cam a2200205 a 4500 001 825985
005 20151027142704.0
008 151209s2013 fluaf b 001 0 eng
010 $a 2013008022
020 $a 1466512652 (cloth) : $c NT5350
020 $a 9781466512658 (cloth)
040 $a DLC $b eng $c NFU $d DLC
041 0 # $a eng
042 $a pcc
050 0 0 $a TK7874.75 $b .T43 2013
082 0 0 $a 621.39/50285 $2 23
245 0 0 $a Technology computer aided design : $b simulation for VLSI MOSFET / $c edited by Chandan Kumar Sarkar.
260 # $a Boca Raton : $b CRC Press, Taylor & Francis Group, $c c2013.
300 $a xv, 430 p., [15] p. of plates : $b ill. (some col.) ; $c 24 cm.
504 $a Includes bibliographical references and index.
520 # $a "MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- $c Provided by publisher.
650 # 0 $a Integrated circuits $x Very large scale integration $x Computer-aided design. $3 682287
650 # 0 $a Metal oxide semiconductor field-effect transistors $x Computer-aided design. $3 1051547
700 1 # $a Sarkar, Chandan Kumar. $3 1051546