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GaP heteroepitaxy on Si(100) = bench...

Doscher, Henning.

GaP heteroepitaxy on Si(100) = benchmarking surface signals when growing GaP on Si in CVD ambients /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	GaP heteroepitaxy on Si(100)/ by Henning Doscher.
Reminder of title:	benchmarking surface signals when growing GaP on Si in CVD ambients /
Author:	Doscher, Henning.
Published:	Cham :Springer International Publishing : : 2013.,
Description:	xiv, 143 p. :ill., digital ; : 24 cm.;
Contained By:	Springer eBooks
Subject:	Optical materials. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-02880-4
ISBN:	9783319028804 (electronic bk.)

GaP heteroepitaxy on Si(100) = benchmarking surface signals when growing GaP on Si in CVD ambients /
Doscher, Henning.

GaP heteroepitaxy on Si(100)benchmarking surface signals when growing GaP on Si in CVD ambients /[electronic resource] :by Henning Doscher. - Cham :Springer International Publishing :2013. - xiv, 143 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

ISBN: 9783319028804 (electronic bk.)Subjects--Topical Terms:

672695
Optical materials.

LC Class. No.: QC374 / .D67 2013

Dewey Class. No.: 620.11295

GaP heteroepitaxy on Si(100) = benchmarking surface signals when growing GaP on Si in CVD ambients /
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