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Dispersion relations in heavily-dope...
~
Ghatak, Kamakhya Prasad.
Dispersion relations in heavily-doped nanostructures
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Dispersion relations in heavily-doped nanostructures/ by Kamakhya Prasad Ghatak.
作者:
Ghatak, Kamakhya Prasad.
出版者:
Cham :Springer International Publishing : : 2016.,
面頁冊數:
lv, 625 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
標題:
Physics. -
電子資源:
http://dx.doi.org/10.1007/978-3-319-21000-1
ISBN:
9783319210001
Dispersion relations in heavily-doped nanostructures
Ghatak, Kamakhya Prasad.
Dispersion relations in heavily-doped nanostructures
[electronic resource] /by Kamakhya Prasad Ghatak. - Cham :Springer International Publishing :2016. - lv, 625 p. :ill., digital ;24 cm. - Springer tracts in modern physics,v.2650081-3869 ;. - Springer tracts in modern physics ;v.248..
From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
ISBN: 9783319210001
Standard No.: 10.1007/978-3-319-21000-1doiSubjects--Topical Terms:
564049
Physics.
LC Class. No.: QC611
Dewey Class. No.: 537.622
Dispersion relations in heavily-doped nanostructures
LDR
:02660nam a2200325 a 4500
001
861157
003
DE-He213
005
20160801102923.0
006
m d
007
cr nn 008maaau
008
170720s2016 gw s 0 eng d
020
$a
9783319210001
$q
(electronic bk.)
020
$a
9783319209999
$q
(paper)
024
7
$a
10.1007/978-3-319-21000-1
$2
doi
035
$a
978-3-319-21000-1
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
QC611
072
7
$a
TJFD5
$2
bicssc
072
7
$a
TEC008090
$2
bisacsh
082
0 4
$a
537.622
$2
23
090
$a
QC611
$b
.G411 2016
100
1
$a
Ghatak, Kamakhya Prasad.
$3
768692
245
1 0
$a
Dispersion relations in heavily-doped nanostructures
$h
[electronic resource] /
$c
by Kamakhya Prasad Ghatak.
260
$a
Cham :
$c
2016.
$b
Springer International Publishing :
$b
Imprint: Springer,
300
$a
lv, 625 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
Springer tracts in modern physics,
$x
0081-3869 ;
$v
v.265
505
0
$a
From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.
520
$a
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
650
0
$a
Physics.
$3
564049
650
0
$a
Solid state physics.
$3
641431
650
0
$a
Nanoscience.
$3
632473
650
0
$a
Nanostructures.
$3
561754
650
0
$a
Semiconductors.
$3
578843
650
0
$a
Microwaves.
$3
636639
650
0
$a
Optical engineering.
$3
720802
650
0
$a
Nanotechnology.
$3
557660
650
2 4
$a
Microwaves, RF and Optical Engineering.
$3
593918
650
2 4
$a
Nanoscale Science and Technology.
$3
783795
650
2 4
$a
Solid State Physics.
$3
768851
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer eBooks
830
0
$a
Springer tracts in modern physics ;
$v
v.248.
$3
881416
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-21000-1
950
$a
Physics and Astronomy (Springer-11651)
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