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Tunneling field effect transistor technology

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Tunneling field effect transistor technology/ edited by Lining Zhang, Mansun Chan.
其他作者:	Zhang, Lining.
出版者:	Cham :Springer International Publishing : : 2016.,
面頁冊數:	ix, 213 p. :ill. (some col.), digital ; : 24 cm.;
Contained By:	Springer eBooks
標題:	Field-effect transistors. -
電子資源:	http://dx.doi.org/10.1007/978-3-319-31653-6
ISBN:	9783319316536

Tunneling field effect transistor technology
Tunneling field effect transistor technology[electronic resource] /edited by Lining Zhang, Mansun Chan. - Cham :Springer International Publishing :2016. - ix, 213 p. :ill. (some col.), digital ;24 cm.

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

ISBN: 9783319316536

Standard No.: 10.1007/978-3-319-31653-6doiSubjects--Topical Terms:

1021068
Field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Tunneling field effect transistor technology
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245 0 0 $a Tunneling field effect transistor technology $h [electronic resource] / $c edited by Lining Zhang, Mansun Chan.
260 $a Cham : $c 2016. $b Springer International Publishing : $b Imprint: Springer,
300 $a ix, 213 p. : $b ill. (some col.), digital ; $c 24 cm.
520 $a This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
650 0 $a Field-effect transistors. $3 1021068
650 1 4 $a Engineering. $3 561152
650 2 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
700 1 $a Zhang, Lining. $3 1107885
700 1 $a Chan, Mansun. $3 1107886
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-31653-6
950 $a Engineering (Springer-11647)

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