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3D TCAD simulation for CMOS nanoelet...

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Jhan, Yi-Ruei.

3D TCAD simulation for CMOS nanoeletronic devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	3D TCAD simulation for CMOS nanoeletronic devices // Yung-Chun Wu, Yi-Ruei Jhan.
作者:	Wu, Yung-Chun.
其他作者:	Jhan, Yi-Ruei.
出版者:	Singapore :Springer, : c2018.,
面頁冊數:	xiii, 330 p. :ill. (some col.) ; : 24 cm.;
標題:	Metal oxide semiconductors, Complementary - Computer-aided design. -
ISBN:	9789811030659 (cloth) :

3D TCAD simulation for CMOS nanoeletronic devices /
Wu, Yung-Chun.

3D TCAD simulation for CMOS nanoeletronic devices /Yung-Chun Wu, Yi-Ruei Jhan. - Singapore :Springer,c2018. - xiii, 330 p. :ill. (some col.) ;24 cm.

Includes bibliographical references.

ISBN: 9789811030659 (cloth) :NT3280Subjects--Topical Terms:

561270
Metal oxide semiconductors, Complementary
--Computer-aided design.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.3815/2

3D TCAD simulation for CMOS nanoeletronic devices /
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245 1 0 $a 3D TCAD simulation for CMOS nanoeletronic devices / $c Yung-Chun Wu, Yi-Ruei Jhan.
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650 # 0 $a Metal oxide semiconductors, Complementary $x Computer-aided design. $3 561270
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