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Growth of high permittivity dielectrics by high pressure sputtering from metallic targets

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Growth of high permittivity dielectrics by high pressure sputtering from metallic targets/ by Maria Angela Pampillon Arce.
Author:	Pampillon Arce, Maria Angela.
Published:	Cham :Springer International Publishing : : 2017.,
Description:	xxiii, 164 p. :ill., digital ; : 24 cm.;
Contained By:	Springer eBooks
Subject:	Metal oxide semiconductor field-effect transistors. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-66607-5
ISBN:	9783319666075

Growth of high permittivity dielectrics by high pressure sputtering from metallic targets
Pampillon Arce, Maria Angela.

Growth of high permittivity dielectrics by high pressure sputtering from metallic targets[electronic resource] /by Maria Angela Pampillon Arce. - Cham :Springer International Publishing :2017. - xxiii, 164 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Fabrication Techniques -- Characterization Techniques -- Thermal Oxidation of Gd2o3 -- Plasma Oxidation of Gd2o3 and Sc2o3 -- Gadolinium Scandate -- Interface Scavenging -- Gd2o3 on Inp Substrates -- Conclusions and Future Work.

This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.

ISBN: 9783319666075

Standard No.: 10.1007/978-3-319-66607-5doiSubjects--Topical Terms:

598326
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.3815284

Growth of high permittivity dielectrics by high pressure sputtering from metallic targets
LDR:02530nam a2200325 a 4500 001 905364
003 DE-He213
005 20180430115101.0
006 m d
007 cr nn 008maaau
008 190308s2017 gw s 0 eng d
020 $a 9783319666075 $q (electronic bk.)
020 $a 9783319666068 $q (paper)
024 7 $a 10.1007/978-3-319-66607-5 $2 doi
035 $a 978-3-319-66607-5
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44
072 7 $a PHFC $2 bicssc
072 7 $a SCI077000 $2 bisacsh
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.99.M44 $b P186 2017
100 1 $a Pampillon Arce, Maria Angela. $3 1172445
245 1 0 $a Growth of high permittivity dielectrics by high pressure sputtering from metallic targets $h [electronic resource] / $c by Maria Angela Pampillon Arce.
260 $a Cham : $c 2017. $b Springer International Publishing : $b Imprint: Springer,
300 $a xxiii, 164 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Fabrication Techniques -- Characterization Techniques -- Thermal Oxidation of Gd2o3 -- Plasma Oxidation of Gd2o3 and Sc2o3 -- Gadolinium Scandate -- Interface Scavenging -- Gd2o3 on Inp Substrates -- Conclusions and Future Work.
520 $a This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 598326
650 1 4 $a Physics. $3 564049
650 2 4 $a Surface and Interface Science, Thin Films. $3 782551
650 2 4 $a Nanotechnology. $3 557660
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Nanotechnology and Microengineering. $3 722030
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 831604
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-66607-5
950 $a Physics and Astronomy (Springer-11651)