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Tunnel field-effect transistors (TFET) = modelling and simulations /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Tunnel field-effect transistors (TFET)/ Jagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey.
其他題名:	modelling and simulations /
作者:	Mamidala, Jagadesh Kumar.
其他作者:	Vishnoi, Rajat.
出版者:	Chichester, West Sussex, UK ;John Wiley & Sons, : 2017.,
面頁冊數:	1 online resource.
標題:	Tunnel field-effect transistors. -
電子資源:	https://onlinelibrary.wiley.com/doi/book/10.1002/9781119246312
ISBN:	9781119246312

Tunnel field-effect transistors (TFET) = modelling and simulations /
Mamidala, Jagadesh Kumar.

Tunnel field-effect transistors (TFET)modelling and simulations /[electronic resource] :Jagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey. - 1st ed. - Chichester, West Sussex, UK ;John Wiley & Sons,2017. - 1 online resource.

Includes bibliographical references and index.

"This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--Provided by publisher.

ISBN: 9781119246312

LCCN: 2016041464Subjects--Topical Terms:

1149447
Tunnel field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815/284

Tunnel field-effect transistors (TFET) = modelling and simulations /
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300 $a 1 online resource.
504 $a Includes bibliographical references and index.
520 $a "This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--Provided by publisher.
588 $a Description based on print version record and CIP data provided by publisher; resource not viewed.
650 0 $a Tunnel field-effect transistors. $3 1149447
650 0 $a Integrated circuits $x Design and construction. $3 561265
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700 1 $a Vishnoi, Rajat. $3 1177973
700 1 $a Pandey, Pratyush. $3 1177974
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