國立虎尾科技大學 |

Novel Nanocrystal Floating Gate Memory.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Novel Nanocrystal Floating Gate Memory./
Author:	Zhou, Huimei.
Description:	1 online resource (137 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 73-12(E), Section: B.
Contained By:	Dissertation Abstracts International73-12B(E).
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9781267504425

Novel Nanocrystal Floating Gate Memory.
Zhou, Huimei.

Novel Nanocrystal Floating Gate Memory. - 1 online resource (137 pages)

Source: Dissertation Abstracts International, Volume: 73-12(E), Section: B.

Thesis (Ph.D.)

Includes bibliographical references

This work is devoted to investigating the feasibility of engineering nanocrystals and tunnel oxide layer with a novel structure. Several novel devices are demonstrated to improve the performance of the novel nanocrystal memories.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781267504425Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Novel Nanocrystal Floating Gate Memory.
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008 190606s2012 xx obm 000 0 eng d
020 $a 9781267504425
035 $a (MiAaPQ)AAI3518694
035 $a (MiAaPQ)ucr:10886
035 $a AAI3518694
040 $a MiAaPQ $b eng $c MiAaPQ
099 $a TUL $f hyy $c available through World Wide Web
100 1 $a Zhou, Huimei. $3 1182080
245 1 0 $a Novel Nanocrystal Floating Gate Memory.
264 0 $c 2012
300 $a 1 online resource (137 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 73-12(E), Section: B.
500 $a Adviser: Jianlin Liu.
502 $a Thesis (Ph.D.) $c University of California, Riverside $d 2012.
504 $a Includes bibliographical references
520 $a This work is devoted to investigating the feasibility of engineering nanocrystals and tunnel oxide layer with a novel structure. Several novel devices are demonstrated to improve the performance of the novel nanocrystal memories.
520 $a A novel TiSi2 nanocrystal memory was demonstrated. TiSi 2 nanocrystals were synthesized on SiO2 by annealing Ti covered Si nanocrystals. Compared to the reference Si nanocrystal memory, both experiment and simulation results show that TiSi2 nanocrystal memory exhibits larger memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the silicide nanocrystals. Due to thermally stable, CMOS compatible properties, TiSi2 nanocrystals are highly promising for nonvolatile memory device application.
520 $a Metal/high-k dielectric core-shell nanocrystal memory capacitors were proposed. This kind of MOS memory shows good performance in charge storage capacity, programming and erasing speed. A self-assembled di-block co-polymer is used to align the NCs to improve the scalability of the overall sample.
520 $a An ordered Co/Al2O3 core-shell nanocrystal (NC) nonvolatile memory device was also fabricated. Self-assembled di-block co-polymer process aligned the NCs with uniform size. Co/Al2O3 core-shell NCs were formed using atomic layer deposition of Al2O 3 before and after the ordered Co NC formation. Compared to Co NC memory, Co/Al2O3 core-shell NC memory shows improved retention performance without sacrificing writing and erasing speeds.
520 $a Another new discrete NiSi nanocrystals (NCs) were synthesized by rapid thermal oxygen annealing (RTO) of very thin Si/Ni/Si films on SiO2 tunneling layer. The RTO process resulted in smooth surface of the NC floating layer, in turn, uniform thickness of subsequent control oxide layer. Metal-oxide-semiconductor capacitor memory was fabricated. Electrical properties of the memory device such as programming, erasing and retention were characterized and good performance was achieved, which is due to the reduction of the leakage paths in the smooth device structure.
520 $a Therefore, it is concluded that metallic nanocrystal with aligned core-shell structure memory is a very promising candidate to replace Si nanocrystal for future generation nonvolatile flash memory devices.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of California, Riverside. $b Electrical Engineering. $3 845380
773 0 $t Dissertation Abstracts International $g 73-12B(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3518694 $z click for full text (PQDT)