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Digital mm-Wave Transmitters.
~
ProQuest Information and Learning Co.
Digital mm-Wave Transmitters.
紀錄類型:
書目-語言資料,手稿 : Monograph/item
正題名/作者:
Digital mm-Wave Transmitters./
作者:
Shopov, Stefan.
面頁冊數:
1 online resource (233 pages)
附註:
Source: Dissertation Abstracts International, Volume: 79-04(E), Section: B.
Contained By:
Dissertation Abstracts International79-04B(E).
標題:
Electrical engineering. -
電子資源:
click for full text (PQDT)
ISBN:
9780355455984
Digital mm-Wave Transmitters.
Shopov, Stefan.
Digital mm-Wave Transmitters.
- 1 online resource (233 pages)
Source: Dissertation Abstracts International, Volume: 79-04(E), Section: B.
Thesis (Ph.D.)
Includes bibliographical references
This thesis presents the design and implementation of digital millimeter-wave transmitters, in silicon, in the 20--140-GHz frequency range. I/Q RF-DAC transmitter architectures with unary-weighted antenna segments and binary-weighted transistor segments are explored to generate high-order QAM modulation formats, while operating in deep saturation and without resorting to upconversion.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9780355455984Subjects--Topical Terms:
596380
Electrical engineering.
Index Terms--Genre/Form:
554714
Electronic books.
Digital mm-Wave Transmitters.
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This thesis presents the design and implementation of digital millimeter-wave transmitters, in silicon, in the 20--140-GHz frequency range. I/Q RF-DAC transmitter architectures with unary-weighted antenna segments and binary-weighted transistor segments are explored to generate high-order QAM modulation formats, while operating in deep saturation and without resorting to upconversion.
520
$a
The antenna segmentation approach is proven experimentally at 100 GHz with a pair of on-die I/Q driven antenna elements, in a 45-nm SOI CMOS process. The proof-of-concept circuit has an EIRP of 15.7 dBm and a data rate of up to 10 Gb/s. Novel modulator topologies based on the Gilbert cell are proposed to improve the modulation rate and accuracy of digital mm-wave transmitters. These topologies are verified at 90 GHz and at 138 GHz through the implementation of I/Q RF power-DAC transmitters with binary-weighted transistor segments. The 90-GHz implementation results in 19 dBm of output power and modulation rates up to 15 Gbaud. At 138 GHz, a 12-bit I/Q RF power-DAC with on-die antennas is fabricated to demonstrate direct 64-QAM and OFDM modulation of a mm-wave carrier without upconversion. The 138-GHz transmitter has an EIRP of 13.2 dBm and is able to operate at data rates of up to 12 Gb/s.
520
$a
Next, techniques to extend the bandwidth and voltage swing of nanoscale CMOS inverter topologies, with resistive and inductive feedback, selective differential-mode inductive peaking, and series stacking are analyzed. These techniques are demonstrated for an optical front-end at 60 Gb/s, with record 4.3-Vpp single-ended output swing, in a 28-nm FD-SOI CMOS process, as well as for two RF-DAC-based radio transmitters at 1--32 GHz with data rates of 20--30-Gb/s, in a 45-nm SOI CMOS process.
520
$a
Lastly, mm-wave signal sources and frequency dividers are designed and experimentally verified at 60 GHz and at 240 GHz in a 45-nm SOI CMOS process and in a 55-nm SiGe BiCMOS process, respectively. At 60 GHz, both fundamental and second-harmonic signal sources for low power applications are demonstrated and compared. At 240 GHz, meanwhile, a second-harmonic source with record 7.2-dBm output power and 1-GHz divided-down output is demonstrated.
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