國立虎尾科技大學 |

Language: English

Back

Design and Optimization of GaN-Based...

ProQuest Information and Learning Co.

Design and Optimization of GaN-Based Power Semiconductor Transistors.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Design and Optimization of GaN-Based Power Semiconductor Transistors./
Author:	Colon, Albert.
Description:	1 online resource (199 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.
Contained By:	Dissertation Abstracts International78-12B(E).
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9780355176803

Design and Optimization of GaN-Based Power Semiconductor Transistors.
Colon, Albert.

Design and Optimization of GaN-Based Power Semiconductor Transistors. - 1 online resource (199 pages)

Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.

Thesis (Ph.D.)

Includes bibliographical references

Gallium Nitride, a wide bandgap semiconductor, is a robust material with applications in high-power transistors and power amplifiers. However, processing technology is still maturing and transistors performance are far from theoretical limits. We investigate several design aspects of the heterojunction transistor including ohmic contact, gate insulation and high off-state breakdown. We discuss ohmic contact formation approaches for low contact resistance (Rc) and low temperature processing and achieve Rc less than 0.2 O•mm. For the transistor gate insulation in the Metal-Insulator-Semiconductor Heterojunction, we study many high-kappa dielectrics, deposited by Atomic Layer Deposition, using both TiO2 and HfO2 variations. We also discuss methods towards evaluating interface trap defects at the insulator/GaN interface. Lastly, we cover one method towards improving off-state breakdown voltage for an InAlN/GaN transistor. Various electrical characterization methods are discussed such as pulsed and DC Current-Voltage and Capacitance-Voltage measurements.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355176803Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Design and Optimization of GaN-Based Power Semiconductor Transistors.
LDR:02338ntm a2200337Ki 4500 001 910973
005 20180517120325.5
006 m o u
007 cr mn||||a|a||
008 190606s2017 xx obm 000 0 eng d
020 $a 9780355176803
035 $a (MiAaPQ)AAI10644444
035 $a (MiAaPQ)0799vireo:344Colon
035 $a AAI10644444
040 $a MiAaPQ $b eng $c MiAaPQ
099 $a TUL $f hyy $c available through World Wide Web
100 1 $a Colon, Albert. $3 1182533
245 1 0 $a Design and Optimization of GaN-Based Power Semiconductor Transistors.
264 0 $c 2017
300 $a 1 online resource (199 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.
500 $a Adviser: Junxia Shi.
502 $a Thesis (Ph.D.) $c University of Illinois at Chicago $d 2017.
504 $a Includes bibliographical references
520 $a Gallium Nitride, a wide bandgap semiconductor, is a robust material with applications in high-power transistors and power amplifiers. However, processing technology is still maturing and transistors performance are far from theoretical limits. We investigate several design aspects of the heterojunction transistor including ohmic contact, gate insulation and high off-state breakdown. We discuss ohmic contact formation approaches for low contact resistance (Rc) and low temperature processing and achieve Rc less than 0.2 O•mm. For the transistor gate insulation in the Metal-Insulator-Semiconductor Heterojunction, we study many high-kappa dielectrics, deposited by Atomic Layer Deposition, using both TiO2 and HfO2 variations. We also discuss methods towards evaluating interface trap defects at the insulator/GaN interface. Lastly, we cover one method towards improving off-state breakdown voltage for an InAlN/GaN transistor. Various electrical characterization methods are discussed such as pulsed and DC Current-Voltage and Capacitance-Voltage measurements.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Illinois at Chicago. $b Electrical and Computer Engineering. $3 1182534
773 0 $t Dissertation Abstracts International $g 78-12B(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10644444 $z click for full text (PQDT)

based on 0 review(s)

Multimedia

Reviews

Add a review and share your thoughts with other readers

Export

pickup library