國立虎尾科技大學 |

Simulation of SiC MOSFET Power Converters.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Simulation of SiC MOSFET Power Converters./
作者:	Albadri, Mustafa.
面頁冊數:	1 online resource (90 pages)
附註:	Source: Masters Abstracts International, Volume: 56-05.
Contained By:	Masters Abstracts International56-05(E).
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9780355110876

Simulation of SiC MOSFET Power Converters.
Albadri, Mustafa.

Simulation of SiC MOSFET Power Converters. - 1 online resource (90 pages)

Source: Masters Abstracts International, Volume: 56-05.

Thesis (M.S.)

Includes bibliographical references

This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same circuits is done using silicon in the first case and silicon carbide MOSFET was implemented under the same conditions and parameters to investigate the silicon carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This spice model can be examined using simulation software such as Multisim, PSpice, LTspice and others. The results focused on many aspects such as on Vout,Vmos stability, circuit efficiency and frequency change effect. It focused also on output power and MOSFET power loss because it is a very crucial aspect on any converter design. These results are done using the National Instrument simulation program (Multisim 14) and a sample of the results are validated using LT Spice.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355110876Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Simulation of SiC MOSFET Power Converters.
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100 1 $a Albadri, Mustafa. $3 1182945
245 1 0 $a Simulation of SiC MOSFET Power Converters.
264 0 $c 2017
300 $a 1 online resource (90 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 56-05.
500 $a Adviser: Mohammad Matin.
502 $a Thesis (M.S.) $c University of Denver $d 2017.
504 $a Includes bibliographical references
520 $a This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same circuits is done using silicon in the first case and silicon carbide MOSFET was implemented under the same conditions and parameters to investigate the silicon carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This spice model can be examined using simulation software such as Multisim, PSpice, LTspice and others. The results focused on many aspects such as on Vout,Vmos stability, circuit efficiency and frequency change effect. It focused also on output power and MOSFET power loss because it is a very crucial aspect on any converter design. These results are done using the National Instrument simulation program (Multisim 14) and a sample of the results are validated using LT Spice.
520 $a In all tests and results it was found that SiC MOSFET made a significant improvement in the power efficiency and decreased power loss compared to Si MOSFET. Using SiC MOSFET in Push-Pull and Buck converter increased system efficiency and decreased MOSFET power loss. SiC is more immune against frequency change and performed better than Si MOSFET. Also, replacing Si MOSFET with SiC MOSFET added more voltage stability against the increase in load demand. These results will lead to design power converters with significant power loss and will decrease power dissipation. It will lead to better performance and a smaller circuit package because of the decrease in the heat sink and ventilation fans. It will save the power, decrease the cost and increase converter life time.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Denver. $b Computer Science and Engineering. $3 1182946
773 0 $t Masters Abstracts International $g 56-05(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10286258 $z click for full text (PQDT)