國立虎尾科技大學 |

Design and analysis of RF CMOS power amplifiers for Bluetooth applications.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Design and analysis of RF CMOS power amplifiers for Bluetooth applications./
作者:	Li, Ying Y.
面頁冊數:	1 online resource (128 pages)
附註:	Source: Masters Abstracts International, Volume: 54-03.
Contained By:	Masters Abstracts International54-03(E).
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9781321547696

Design and analysis of RF CMOS power amplifiers for Bluetooth applications.
Li, Ying Y.

Design and analysis of RF CMOS power amplifiers for Bluetooth applications. - 1 online resource (128 pages)

Source: Masters Abstracts International, Volume: 54-03.

Thesis (M.S.)

Includes bibliographical references

This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications in GPDK 45 nm CMOS technology. The target of the design was to minimize the transceiver's power consumption while achieving the best device operating performances. The design of a band-pass low noise amplifier (LNA) used for the receiver and the design of a power amplifier (PA) used for the transmitter were presented. Both amplifiers were designed in 45 nm CMOS technology with a DC supply voltage under 1.2 V to meet Bluetooth specifications at 2.45 GHz operating frequency. The LNA was designed to achieve a minimum small signal gain of at least 15 dB10 with a NF less than 2 dB10 and a reasonable input range for linearity at 1 mW operating power consumption. The PA was designed based on class E switching power amplifier configuration to achieve a minimum of 40% drain efficiency for 100 mW (Bluetooth Class 1) output power. Research on low power high performance Bluetooth device front-end RF amplifiers was conducted through studies of wireless communication modulation schemes, impedance matching networks, and trade-offs between performance parameters. In summation, this thesis searched for, explored, and analyzed possible methodologies that could be used to design RF CMOS amplifiers of Bluetooth applications.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781321547696Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Design and analysis of RF CMOS power amplifiers for Bluetooth applications.
LDR:02562ntm a2200337Ki 4500 001 911999
005 20180605073452.5
006 m o u
007 cr mn||||a|a||
008 190606s2014 xx obm 000 0 eng d
020 $a 9781321547696
035 $a (MiAaPQ)AAI1583497
035 $a (MiAaPQ)sjsu:10852
035 $a AAI1583497
040 $a MiAaPQ $b eng $c MiAaPQ
099 $a TUL $f hyy $c available through World Wide Web
100 1 $a Li, Ying Y. $3 1184159
245 1 0 $a Design and analysis of RF CMOS power amplifiers for Bluetooth applications.
264 0 $c 2014
300 $a 1 online resource (128 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 54-03.
500 $a Adviser: Sotoudeh Hamedi-Hagh.
502 $a Thesis (M.S.) $c San Jose State University $d 2014.
504 $a Includes bibliographical references
520 $a This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications in GPDK 45 nm CMOS technology. The target of the design was to minimize the transceiver's power consumption while achieving the best device operating performances. The design of a band-pass low noise amplifier (LNA) used for the receiver and the design of a power amplifier (PA) used for the transmitter were presented. Both amplifiers were designed in 45 nm CMOS technology with a DC supply voltage under 1.2 V to meet Bluetooth specifications at 2.45 GHz operating frequency. The LNA was designed to achieve a minimum small signal gain of at least 15 dB10 with a NF less than 2 dB10 and a reasonable input range for linearity at 1 mW operating power consumption. The PA was designed based on class E switching power amplifier configuration to achieve a minimum of 40% drain efficiency for 100 mW (Bluetooth Class 1) output power. Research on low power high performance Bluetooth device front-end RF amplifiers was conducted through studies of wireless communication modulation schemes, impedance matching networks, and trade-offs between performance parameters. In summation, this thesis searched for, explored, and analyzed possible methodologies that could be used to design RF CMOS amplifiers of Bluetooth applications.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a San Jose State University. $b Engineering. $3 845701
773 0 $t Masters Abstracts International $g 54-03(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1583497 $z click for full text (PQDT)