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Noise and area reduction in CMOS low...
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ProQuest Information and Learning Co.
Noise and area reduction in CMOS low noise amplifiers.
紀錄類型:
書目-語言資料,手稿 : Monograph/item
正題名/作者:
Noise and area reduction in CMOS low noise amplifiers./
作者:
Lin, Changgui.
面頁冊數:
1 online resource (170 pages)
附註:
Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8261.
Contained By:
Dissertation Abstracts International68-12B.
標題:
Electrical engineering. -
電子資源:
click for full text (PQDT)
ISBN:
9780549382300
Noise and area reduction in CMOS low noise amplifiers.
Lin, Changgui.
Noise and area reduction in CMOS low noise amplifiers.
- 1 online resource (170 pages)
Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8261.
Thesis (Ph.D.)
Includes bibliographical references
This item is not available from ProQuest Dissertations & Theses.
A low noise amplifier (LNA) plays a crucial role at the front-end in RF wireless communication. It directly determines the sensitivity of the system. In fact the LNA is indispensable in transceivers of either direct or heterodyne conversion. With the explosive growth of wireless local area network (WLAN) markets in recent years, single-chip CMOS WLAN transceivers have become highly desirable. The frequency bands of commercialized WLAN standards are located currently in low giga-Hertz (GHz) bands (2.4GHz or 5GHz). But the emerging ultra wideband (UWB) actually occupies the continuous spectrum from 3.1GHz to 10.6GHz. So design and optimization of CMOS LNAs at WLAN band has been a challenging and demanding task, especially wideband CMOS LNAs.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9780549382300Subjects--Topical Terms:
596380
Electrical engineering.
Index Terms--Genre/Form:
554714
Electronic books.
Noise and area reduction in CMOS low noise amplifiers.
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Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8261.
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Includes bibliographical references
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A low noise amplifier (LNA) plays a crucial role at the front-end in RF wireless communication. It directly determines the sensitivity of the system. In fact the LNA is indispensable in transceivers of either direct or heterodyne conversion. With the explosive growth of wireless local area network (WLAN) markets in recent years, single-chip CMOS WLAN transceivers have become highly desirable. The frequency bands of commercialized WLAN standards are located currently in low giga-Hertz (GHz) bands (2.4GHz or 5GHz). But the emerging ultra wideband (UWB) actually occupies the continuous spectrum from 3.1GHz to 10.6GHz. So design and optimization of CMOS LNAs at WLAN band has been a challenging and demanding task, especially wideband CMOS LNAs.
520
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This dissertation focuses on area and noise reduction in WLAN CMOS LNA's. The four related aspects studied in depth are (1) Wideband LNA topology design with area reduction; (2) Noise analysis and reduction; (3) Scalable broadband lumped circuit modeling for CMOS on-chip symmetrical-differential inductors; and (4) Analytical evaluation of differential inductors based on coplanar and spiral layout parameters in CMOS.
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click for full text (PQDT)
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