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Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process./
Author:	Barlow, Matthew W.
Description:	1 online resource (197 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9781369780109

Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process.
Barlow, Matthew W.

Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process. - 1 online resource (197 pages)

Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.

Thesis (Ph.D.)--University of Arkansas, 2017.

Includes bibliographical references

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369780109Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process.
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245 1 0 $a Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process.
264 0 $c 2017
300 $a 1 online resource (197 pages)
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500 $a Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
500 $a Adviser: Homer A. Mantooth.
502 $a Thesis (Ph.D.)--University of Arkansas, 2017.
504 $a Includes bibliographical references
520 $a Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.
520 $a The primary requirement to ensure rapid switching of power MOSFETs was a gate drive buffer capable of taking a control signal and driving the MOSFET gate with high current required. In this work, the first integrated SiC CMOS gate driver was developed in a 1.2 mum SiC CMOS process to drive a SiC power MOSFET. The driver was designed for close integration inside a power module and exposure to high temperatures. The drive strength of the gate driver was controllable to allow for managing power MOSFET switching speed and potential drain voltage overshoot. Output transistor layouts were optimized using custom Python software in conjunction with existing design tool resources. A wafer-level test system was developed to identify yield issues in the gate driver output transistors. This method allowed for qualitative and quantitative evaluation of transistor leakage while the system was under probe. Wafer-level testing and results are presented.
520 $a The gate driver was tested under high temperature operation up to 530 ?. An integrated module was built and tested to illustrate the capability of the gate driver to control a power MOSFET under load. The adjustable drive strength feature was successfully demonstrated.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Arkansas. $b Electrical Engineering. $3 1182918
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10250609 $z click for full text (PQDT)