國立虎尾科技大學 |

Engineering Low-Dimensional Nanostructures Towards Flexible Electronics.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Engineering Low-Dimensional Nanostructures Towards Flexible Electronics./
作者:	Byrley, Peter Samuel.
面頁冊數:	1 online resource (106 pages)
附註:	Source: Dissertation Abstracts International, Volume: 79-02(E), Section: B.
標題:	Nanotechnology. -
電子資源:	click for full text (PQDT)
ISBN:	9780355294873

Engineering Low-Dimensional Nanostructures Towards Flexible Electronics.
Byrley, Peter Samuel.

Engineering Low-Dimensional Nanostructures Towards Flexible Electronics. - 1 online resource (106 pages)

Source: Dissertation Abstracts International, Volume: 79-02(E), Section: B.

Thesis (Ph.D.)--University of California, Riverside, 2017.

Includes bibliographical references

Flexible electronics have been proposed as the next generation of electronic devices. They have advantages over traditional electronics in that they use less material, are more durable and have greater versatility in their proposed applications. However, there are a variety of types of devices being developed that have specific engineering challenges. This dissertation addresses two of those challenges. The first challenge involves lowering contact resistance in MoS2 based flexible thin film transistor devices using a photochemical phase change method while the second addresses using silver nanowire networks as a replacement flexible electrode for indium tin oxide in flexible electronics.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355294873Subjects--Topical Terms:

557660
Nanotechnology.
Index Terms--Genre/Form:

554714
Electronic books.

Engineering Low-Dimensional Nanostructures Towards Flexible Electronics.
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245 1 0 $a Engineering Low-Dimensional Nanostructures Towards Flexible Electronics.
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500 $a Source: Dissertation Abstracts International, Volume: 79-02(E), Section: B.
500 $a Adviser: Ruoxue Yan.
502 $a Thesis (Ph.D.)--University of California, Riverside, 2017.
504 $a Includes bibliographical references
520 $a Flexible electronics have been proposed as the next generation of electronic devices. They have advantages over traditional electronics in that they use less material, are more durable and have greater versatility in their proposed applications. However, there are a variety of types of devices being developed that have specific engineering challenges. This dissertation addresses two of those challenges. The first challenge involves lowering contact resistance in MoS2 based flexible thin film transistor devices using a photochemical phase change method while the second addresses using silver nanowire networks as a replacement flexible electrode for indium tin oxide in flexible electronics.
520 $a In this dissertation, a scalable method was developed for making monolayer MoS2 using ambient pressure chemical vapor deposition. These films were then characterized using spectroscopic techniques and atomic force microscopy. A photochemical phase change mechanism was then proposed to improve contact resistance in MoS2 based devices. The central hypothesis is that the controllable partial transition from a semiconducting 2H to metallic 1T phase can be realized in monolayer TMDs through photo-reduction in the presence of hole scavenging chemicals. Phase-engineering in monolayer TMDs would enable the fabrication of high-quality heterophase structures with the potential to improve carrier mobility and contact. Phase change as a result of the proposed photochemical method was confirmed using Raman spectroscopy, photoluminescence measurements, X-Ray photoelectron spectroscopy and other supporting data.
520 $a Gold coated silver nanowires were then created to serve as flexible nanowire based electrodes by overcoming galvanic replacement in solution. This was confirmed using various forms of electron microscopy. The central hypothesis is that a thin gold coating will enable silver nanowire meshes to remain electrically stable in atmosphere and retain necessary low resistance values and transparencies over time. It was shown that gold coated silver nanowire meshes could be created with sheet resistances comparable to indium tin oxide and outlast their bare silver nanowire counterparts in environments at 80 deg C.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Nanotechnology. $3 557660
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650 4 $a Electrical engineering. $3 596380
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710 2 $a University of California, Riverside. $b Chemical and Environmental Engineering. $3 1182128
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