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Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy./
作者:	Woodward, Jeffrey Michael.
面頁冊數:	1 online resource (145 pages)
附註:	Source: Dissertation Abstracts International, Volume: 78-07(E), Section: B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9781369652734

Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy.
Woodward, Jeffrey Michael.

Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy. - 1 online resource (145 pages)

Source: Dissertation Abstracts International, Volume: 78-07(E), Section: B.

Thesis (Ph.D.)--Boston University, 2017.

Includes bibliographical references

The development of InGaN quantum dots (QDs) is both scienti?cally challenging and promising for applications in visible spectrum LEDs, lasers, detectors, electroabsorption modulators and photovoltaics. Such QDs are typically grown using the Stranski-Krastanov (SK) growth mode, in which accumulated in-plane compressive strain induces a transition from 2D to 3D growth. This method has a number of inherent limitations, including the unavoidable formation of a 2D wetting layer and the di?culty of controlling the composition, areal density, and size of the dots. In this research, I have developed InGaN QDs by two methods using a plasma-assisted molecular beam epitaxy reactor. In the ?rst method, InGaN QDs were formed by SK growth mode on (0001) GaN/sapphire. In the second, I have addressed the limitations of the SK growth of InGaN QDs by developing a novel alternative method, which was utilized to grow on both (0001) GaN/sapphire and AlN/sapphire. This method relies upon the ability to form thermodynamically stable In-Ga liquid solutions throughout the entire compositional range at relatively low temperatures. Upon simultaneous or sequential deposition of In and Ga on a substrate, the adatoms form a liquid solution, whose composition is controlled by the ratio of the fluxes of the two constituents FIn/(FIn+FGa ). Depending on the interfacial free energy between the liquid deposit and substrate, the liquid deposit and vapor, and the vapor and substrate, the liquid deposit forms Inx-Ga1-- x nano-droplets on the substrate. These nano-droplets convert into InxGa1--xN QDs upon exposure to nitrogen RF plasma. InGaN QDs produced by both methods were investigated in-situ by reflection high-energy electron diffraction and ex-situ by atomic force microscopy, field emission scanning electron microscopy, transmission electron microscopy, high resolution x-ray diffraction, and grazing incidence small angle x-ray scattering. The optical activity and device potential of the QDs were investigated by photoluminescence measurements and the formation and evaluation of PIN devices (in which the intrinsic region contains QDs embedded within a higher bandgap matrix). InGaN QDs with areal densities ranging from 109 to 1011 cm --2 and diameters ranging from 11 to 39 nm were achieved.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369652734Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy.
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500 $a Source: Dissertation Abstracts International, Volume: 78-07(E), Section: B.
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502 $a Thesis (Ph.D.)--Boston University, 2017.
504 $a Includes bibliographical references
520 $a The development of InGaN quantum dots (QDs) is both scienti?cally challenging and promising for applications in visible spectrum LEDs, lasers, detectors, electroabsorption modulators and photovoltaics. Such QDs are typically grown using the Stranski-Krastanov (SK) growth mode, in which accumulated in-plane compressive strain induces a transition from 2D to 3D growth. This method has a number of inherent limitations, including the unavoidable formation of a 2D wetting layer and the di?culty of controlling the composition, areal density, and size of the dots. In this research, I have developed InGaN QDs by two methods using a plasma-assisted molecular beam epitaxy reactor. In the ?rst method, InGaN QDs were formed by SK growth mode on (0001) GaN/sapphire. In the second, I have addressed the limitations of the SK growth of InGaN QDs by developing a novel alternative method, which was utilized to grow on both (0001) GaN/sapphire and AlN/sapphire. This method relies upon the ability to form thermodynamically stable In-Ga liquid solutions throughout the entire compositional range at relatively low temperatures. Upon simultaneous or sequential deposition of In and Ga on a substrate, the adatoms form a liquid solution, whose composition is controlled by the ratio of the fluxes of the two constituents FIn/(FIn+FGa ). Depending on the interfacial free energy between the liquid deposit and substrate, the liquid deposit and vapor, and the vapor and substrate, the liquid deposit forms Inx-Ga1-- x nano-droplets on the substrate. These nano-droplets convert into InxGa1--xN QDs upon exposure to nitrogen RF plasma. InGaN QDs produced by both methods were investigated in-situ by reflection high-energy electron diffraction and ex-situ by atomic force microscopy, field emission scanning electron microscopy, transmission electron microscopy, high resolution x-ray diffraction, and grazing incidence small angle x-ray scattering. The optical activity and device potential of the QDs were investigated by photoluminescence measurements and the formation and evaluation of PIN devices (in which the intrinsic region contains QDs embedded within a higher bandgap matrix). InGaN QDs with areal densities ranging from 109 to 1011 cm --2 and diameters ranging from 11 to 39 nm were achieved.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
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690 $a 0794
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710 2 $a Boston University. $b Electrical and Computer Engineering. $3 1179666
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