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Hydrogen Plasma Passivation of Ultra...

Nesmith, Steven Tyler.

Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide./
作者:	Nesmith, Steven Tyler.
面頁冊數:	1 online resource (129 pages)
附註:	Source: Masters Abstracts International, Volume: 56-03.
標題:	Engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9781369681154

Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
Nesmith, Steven Tyler.

Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide. - 1 online resource (129 pages)

Source: Masters Abstracts International, Volume: 56-03.

Thesis (M.A.S.)--University of Toronto (Canada), 2017.

Includes bibliographical references

A novel low-temperature passivation technique using an ozone-grown silicon oxide film on crystalline (100) silicon treated with hydrogen plasma is developed and optimized using the Response Surface Methodology. Four-fold enhancement of excess minority carrier lifetime, up to 30 mus, is achieved with only &sim;1 nanometer of oxide grown. Using parallel angle resolved x-ray photoelectron spectroscopy, it is found that the concentration of silicon sub-oxide states at the silicon -- silicon oxide interface, and within the silicon oxide film, are reduced. Also, first successful ozone-grown oxide, hydrogen-plasma passivated, metal-insulator-semiconductor devices are demonstrated. A change in the device's current -- voltage characteristics from an Ohmic to a Schottky contact is seen after treatment with the hydrogen plasma. It is proposed that the formation of chromium -- hydrogen bonds in the interfacial oxide region causes an increase in the Schottky barrier that impedes majority carrier flow.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369681154Subjects--Topical Terms:

561152
Engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
LDR:02146ntm a2200325K 4500 001 914070
005 20180703084420.5
006 m o u
007 cr mn||||a|a||
008 190606s2017 xx obm 000 0 eng d
020 $a 9781369681154
035 $a (MiAaPQ)AAI10255610
035 $a (MiAaPQ)toronto:15352
035 $a AAI10255610
040 $a MiAaPQ $b eng $c MiAaPQ
100 1 $a Nesmith, Steven Tyler. $3 1187159
245 1 0 $a Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
264 0 $c 2017
300 $a 1 online resource (129 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 56-03.
500 $a Adviser: Nazir P. Kherani.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2017.
504 $a Includes bibliographical references
520 $a A novel low-temperature passivation technique using an ozone-grown silicon oxide film on crystalline (100) silicon treated with hydrogen plasma is developed and optimized using the Response Surface Methodology. Four-fold enhancement of excess minority carrier lifetime, up to 30 mus, is achieved with only &sim;1 nanometer of oxide grown. Using parallel angle resolved x-ray photoelectron spectroscopy, it is found that the concentration of silicon sub-oxide states at the silicon -- silicon oxide interface, and within the silicon oxide film, are reduced. Also, first successful ozone-grown oxide, hydrogen-plasma passivated, metal-insulator-semiconductor devices are demonstrated. A change in the device's current -- voltage characteristics from an Ohmic to a Schottky contact is seen after treatment with the hydrogen plasma. It is proposed that the formation of chromium -- hydrogen bonds in the interfacial oxide region causes an increase in the Schottky barrier that impedes majority carrier flow.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Engineering. $3 561152
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
690 $a 0537
690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 1148628
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10255610 $z click for full text (PQDT)

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