Language:
English
繁體中文
Help
Login
Back
Switch To:
Labeled
|
MARC Mode
|
ISBD
Hydrogen Plasma Passivation of Ultra...
~
Nesmith, Steven Tyler.
Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
Record Type:
Language materials, manuscript : Monograph/item
Title/Author:
Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide./
Author:
Nesmith, Steven Tyler.
Description:
1 online resource (129 pages)
Notes:
Source: Masters Abstracts International, Volume: 56-03.
Subject:
Engineering. -
Online resource:
click for full text (PQDT)
ISBN:
9781369681154
Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
Nesmith, Steven Tyler.
Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
- 1 online resource (129 pages)
Source: Masters Abstracts International, Volume: 56-03.
Thesis (M.A.S.)--University of Toronto (Canada), 2017.
Includes bibliographical references
A novel low-temperature passivation technique using an ozone-grown silicon oxide film on crystalline (100) silicon treated with hydrogen plasma is developed and optimized using the Response Surface Methodology. Four-fold enhancement of excess minority carrier lifetime, up to 30 mus, is achieved with only ∼1 nanometer of oxide grown. Using parallel angle resolved x-ray photoelectron spectroscopy, it is found that the concentration of silicon sub-oxide states at the silicon -- silicon oxide interface, and within the silicon oxide film, are reduced. Also, first successful ozone-grown oxide, hydrogen-plasma passivated, metal-insulator-semiconductor devices are demonstrated. A change in the device's current -- voltage characteristics from an Ohmic to a Schottky contact is seen after treatment with the hydrogen plasma. It is proposed that the formation of chromium -- hydrogen bonds in the interfacial oxide region causes an increase in the Schottky barrier that impedes majority carrier flow.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9781369681154Subjects--Topical Terms:
561152
Engineering.
Index Terms--Genre/Form:
554714
Electronic books.
Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
LDR
:02146ntm a2200325K 4500
001
914070
005
20180703084420.5
006
m o u
007
cr mn||||a|a||
008
190606s2017 xx obm 000 0 eng d
020
$a
9781369681154
035
$a
(MiAaPQ)AAI10255610
035
$a
(MiAaPQ)toronto:15352
035
$a
AAI10255610
040
$a
MiAaPQ
$b
eng
$c
MiAaPQ
100
1
$a
Nesmith, Steven Tyler.
$3
1187159
245
1 0
$a
Hydrogen Plasma Passivation of Ultra-Thin Ozone-Grown Silicon Oxide.
264
0
$c
2017
300
$a
1 online resource (129 pages)
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
500
$a
Source: Masters Abstracts International, Volume: 56-03.
500
$a
Adviser: Nazir P. Kherani.
502
$a
Thesis (M.A.S.)--University of Toronto (Canada), 2017.
504
$a
Includes bibliographical references
520
$a
A novel low-temperature passivation technique using an ozone-grown silicon oxide film on crystalline (100) silicon treated with hydrogen plasma is developed and optimized using the Response Surface Methodology. Four-fold enhancement of excess minority carrier lifetime, up to 30 mus, is achieved with only ∼1 nanometer of oxide grown. Using parallel angle resolved x-ray photoelectron spectroscopy, it is found that the concentration of silicon sub-oxide states at the silicon -- silicon oxide interface, and within the silicon oxide film, are reduced. Also, first successful ozone-grown oxide, hydrogen-plasma passivated, metal-insulator-semiconductor devices are demonstrated. A change in the device's current -- voltage characteristics from an Ohmic to a Schottky contact is seen after treatment with the hydrogen plasma. It is proposed that the formation of chromium -- hydrogen bonds in the interfacial oxide region causes an increase in the Schottky barrier that impedes majority carrier flow.
533
$a
Electronic reproduction.
$b
Ann Arbor, Mich. :
$c
ProQuest,
$d
2018
538
$a
Mode of access: World Wide Web
650
4
$a
Engineering.
$3
561152
650
4
$a
Materials science.
$3
557839
655
7
$a
Electronic books.
$2
local
$3
554714
690
$a
0537
690
$a
0794
710
2
$a
ProQuest Information and Learning Co.
$3
1178819
710
2
$a
University of Toronto (Canada).
$b
Electrical and Computer Engineering.
$3
1148628
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10255610
$z
click for full text (PQDT)
based on 0 review(s)
Multimedia
Reviews
Add a review
and share your thoughts with other readers
Export
pickup library
Processing
...
Change password
Login