國立虎尾科技大學 |

Materials for giant spin Hall effect devices.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Materials for giant spin Hall effect devices./
作者:	Jayanthinarasimham, Avyaya.
面頁冊數:	1 online resource (117 pages)
附註:	Source: Dissertation Abstracts International, Volume: 78-08(E), Section: B.
標題:	Materials science. -
電子資源:	click for full text (PQDT)
ISBN:	9781369628463

Materials for giant spin Hall effect devices.
Jayanthinarasimham, Avyaya.

Materials for giant spin Hall effect devices. - 1 online resource (117 pages)

Source: Dissertation Abstracts International, Volume: 78-08(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2017.

Includes bibliographical references

Studies presented in this thesis are an effort to control the growth of beta W and explore the in-plane current induced effects in a beta W and CoFeB bilayer. Physical vapor deposited W films beyond 5 nm transform from beta to the stable bulk alpha phase. beta W films with 5 nm thickness when integrated with the other films for large scale fabrication presents a small process window for etch and deposition errors. Also, CoFeB on W does not generate perpendicular magnetic anisotropy (PMA) even when it is capped with MgOjTa(Capping) layers. The beta W with larger thickness process window and a CoFeB with PMA deposited on top of W is necessary for an ideal functioning spin Hall effect (SHE) device. This thesis will focus on overcoming the above mentioned challenges.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369628463Subjects--Topical Terms:

557839
Materials science.
Index Terms--Genre/Form:

554714
Electronic books.

Materials for giant spin Hall effect devices.
LDR:04046ntm a2200373K 4500 001 914086
005 20180703084420.5
006 m o u
007 cr mn||||a|a||
008 190606s2017 xx obm 000 0 eng d
020 $a 9781369628463
035 $a (MiAaPQ)AAI10258516
035 $a (MiAaPQ)sunyalb:12056
035 $a AAI10258516
040 $a MiAaPQ $b eng $c MiAaPQ
100 1 $a Jayanthinarasimham, Avyaya. $3 1187181
245 1 0 $a Materials for giant spin Hall effect devices.
264 0 $c 2017
300 $a 1 online resource (117 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 78-08(E), Section: B.
500 $a Adviser: Vincent P. LaBella.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2017.
504 $a Includes bibliographical references
520 $a Studies presented in this thesis are an effort to control the growth of beta W and explore the in-plane current induced effects in a beta W and CoFeB bilayer. Physical vapor deposited W films beyond 5 nm transform from beta to the stable bulk alpha phase. beta W films with 5 nm thickness when integrated with the other films for large scale fabrication presents a small process window for etch and deposition errors. Also, CoFeB on W does not generate perpendicular magnetic anisotropy (PMA) even when it is capped with MgOjTa(Capping) layers. The beta W with larger thickness process window and a CoFeB with PMA deposited on top of W is necessary for an ideal functioning spin Hall effect (SHE) device. This thesis will focus on overcoming the above mentioned challenges.
520 $a 2 sccm of O2 gas was introduced during the growth of beta W, this resulted in thicker films with beta W. If a large amount of O2 was introduced, it resulted in complete oxidation and loss of crystallinity. Thus an optimum amount of oxygen is necessary. However, introducing O2 during the deposition can effect other metals present on the wafer, which is not ideal. N2 was utilized to achieve thicker beta W films. Upon introducing N with similar concentration of O, it lead to amorphization of W, thus revealing a kinetic control. A pulsed N2 of 1 sccm at 2-second period was used to kinetically control the growth of beta W. Both the techniques were able to grow beta W from 5 nm up to 20 nm thick films. Films with N-assisted growth exhibited lower resistance and higher metallic character.
520 $a 1 nm Ta, Mo and CoFe were used as insert layers between beta W and CoFeB to induce PMA. 1 nm Mo insert layer and 5 nm Mo under layer have largely different interfaces with CoFeB even when annealed in ultra high vacuum (UHV) environment. Thus, 1 nm Mo layer does not show any PMA. The CoFe insert layer adds to the bulk anisotropy and dominates the interface anisotropy, and does not lead to any PMA. The 1 nm Ta insert exhibits strong PMA in both as deposited and annealed condition. Hence, the stack SUB&mid; beta-W&mid;Ta&mid;CoFeB&mid;MgO&mid;Ta was deposited and patterned into a Hall bar device. The competition between external magnetic field and internal effective fields is demonstrated. An empirical model is developed to estimate the spin Hall angle (SHA). The SHA is estimated = 0.24 +/- 0.05 for the entire stack. Current induced switching of single ferromagnetic metal (FM) is also shown and the SHE symmetry is preserved.
520 $a The results presented in the thesis demonstrate the full capacity to integrate SHE materials like beta W in a 300 mm integrated circuit fabrication facility. A prototypical device is fabricated and studied. Along with the challenges which are inherent to the effect and some insights to overcome them and a future outlook.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
650 4 $a Condensed matter physics. $3 1148471
650 4 $a Physics. $3 564049
655 7 $a Electronic books. $2 local $3 554714
690 $a 0794
690 $a 0611
690 $a 0605
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1182550
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10258516 $z click for full text (PQDT)