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Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets./
作者:	Arab, Abbas.
面頁冊數:	1 online resource (95 pages)
附註:	Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9780355236262

Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets.
Arab, Abbas.

Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets. - 1 online resource (95 pages)

Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.

Thesis (Ph.D.)--George Mason University, 2017.

Includes bibliographical references

Atomically thin materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have attracted a lot of interest since the discovery of Graphene. Potential use of Graphene in semiconductor industry has been hindered by the fact that graphene is a semi metal with zero band gap. The difficulties in engineering band gap in graphene turn the focus light to inherent semiconducting two-dimensional (2D) materials; TMDCs.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355236262Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets.
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245 1 0 $a Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets.
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500 $a Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.
500 $a Adviser: Qiliang Li.
502 $a Thesis (Ph.D.)--George Mason University, 2017.
504 $a Includes bibliographical references
520 $a Atomically thin materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have attracted a lot of interest since the discovery of Graphene. Potential use of Graphene in semiconductor industry has been hindered by the fact that graphene is a semi metal with zero band gap. The difficulties in engineering band gap in graphene turn the focus light to inherent semiconducting two-dimensional (2D) materials; TMDCs.
520 $a Bulk of TMDCs are formed by layers vertically stacked and weakly bonded together via weak van der Waals interactions. These weak interlayer forces make it possible to obtain monolayer by using scotch tape exfoliation or lithium-ion intercalation. Among the semiconducting members of TMDCs, MoS 2 is the most appealing candidate, partly due to its thermal stability and also for its natural abundance. Intensive study of electronic properties of MoS2 has revealed the desirable band gap (1.2 eV), good carrier xmobility (which is close to those of silicon thin films and graphene nanoribbons), thermal stability and a surface free from dangling bonds make it a perfect candidate for electronic and opto-electronic applications. Despite the fact that MoS2 has a high Seebeck coefficient, its thermoelectric properties have not studied as well as it should be.
520 $a In this work, we have studied thermoelectric properties of monolayer and fewlayer MoS2 sheets in both armchair and zigzag orientations and also of monolayer MoS2 armchair nanoribbons. Density functional theory (DFT) using non-equilibrium Green's function (NEGF) method in ballistic transport regime of Landauer-Buttiker formulation in linear transport approximation has been implemented to calculate the transmission spectra and consequently electronic transport coefficients. Phonon transmission spectra are calculated based on parameterization of Stillinger-Weber potential. Thermoelectric figure of merit, ZT, is calculated using these electronic and phonon transmission spectra. In the case of MoS2 sheets, thermoelectric properties of monolayer, bilayer, trilayer and quadlayer in armchair and zigzag directions have been studied. Our results show that as number of layers increase from monolayer to quadlayer, both transmission spectrum and phonon thermal conductance increase. In addition, strong electronic and thermal anisotropy is found between zigzag and armchair orientations. Transmission coefficient and phonon thermal conductance of zigzag orientation is higher than those of armchair with the same number of layers. Electrical conductance and phonon thermal conductance are competing forces in achieving a high thermoelectric figure of merit. Advantage of having a higher electrical conductance in zigzag orientation has been nullified by having a higher phonon thermal conductance. In fact, our results show higher thermoelectric xifigure of merit for armchair oriented than zigzag oriented sheets. Also as number of layer decreases from quadlayer to monolayer, we are witnessing a higher thermoelectric figure of merit for both armchair and zigzag oriented sheets. Hence, the highest achieved thermoelectric figure of merit was obtained by monolayer armchair MoS2 sheet for both p-type and n-type semiconducting behavior.
520 $a In case of MoS2 armchair nanoribbons, effect of several factors has been studied; width of nanoribbon, Sulfur vacancy and edge roughness. The electronic properties of nanoribbons are dominated by the presence of edge states that are dependent on the number of zigzag chains across the nanoribbon. In addition, it is found that the phonon thermal conductance of monolayer MoS2 armchair nanoribbon is smaller compared to MoS2 monolayer armchair sheet. This outcome can be explained by phonon edge scattering. The effect of this phonon edge scattering is more pronounced in narrower nanoribbons compared to wide ones which leads to higher thermoelectric figure of merit for narrow nanoribbons. The effect of edge roughness and sulfur vacancy on thermoelectric behavior of MoS2 nanoribbons is also studied. Our result shows that edge roughness decreased the thermoelectric figure of merit compared to those of a perfect nanoribbon as its impact on electrical conductance is more severe than on phonon thermal conductance. Sulfur vacancy, however, improved thermoelectric figure of merit of MoS2 nanoribbons. It has been shown that thermoelectric figure of merit as high as 4 and 3 at T = 500K can be achieved n-doped and p-doped MoS2 nanoribbons. The ability of getting a high thermoelectric figure of merit for both n-type and p-type behavior from the same material will be a huge boost to thermoelectric industry if realized.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
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690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a George Mason University. $b Electrical and Computer Engineering. $3 1187212
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10262685 $z click for full text (PQDT)