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Tunneling Magnetoresistance in Iron ...

Morgan State University.

Tunneling Magnetoresistance in Iron (Fe) / Topological Insulator / Iron (Fe).

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Tunneling Magnetoresistance in Iron (Fe) / Topological Insulator / Iron (Fe)./
作者:	Aryee, Dennis.
面頁冊數:	1 online resource (48 pages)
附註:	Source: Masters Abstracts International, Volume: 56-06.
標題:	Physics. -
電子資源:	click for full text (PQDT)
ISBN:	9780355128819

Tunneling Magnetoresistance in Iron (Fe) / Topological Insulator / Iron (Fe).
Aryee, Dennis.

Tunneling Magnetoresistance in Iron (Fe) / Topological Insulator / Iron (Fe). - 1 online resource (48 pages)

Source: Masters Abstracts International, Volume: 56-06.

Thesis (M.S.)--Morgan State University, 2017.

Includes bibliographical references

Tri-layer thin films of iron (Fe) with topological insulator (TI) as a buffer, Fe/TI/Fe was synthesized using magnetron DC/RF sputtering on MgO (100) substrate at a substrate temperature of 100°C with Bi2Te3. The topological insulator, used as a buffer layer is Bi2Te3. The multilayered samples thus produced were studied using an in-house built magneto-optic Kerr effect (MOKE) instrument, vibrating sample magnetometer (VSM), magnetic force microscopy (MFM), and torque magnetometer (TMM). Further analysis was made by probe measurements and Physical Property Measurements System (PPMS) to measure electrical conductivity properties.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355128819Subjects--Topical Terms:

564049
Physics.
Index Terms--Genre/Form:

554714
Electronic books.

Tunneling Magnetoresistance in Iron (Fe) / Topological Insulator / Iron (Fe).
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035 $a AAI10262710
040 $a MiAaPQ $b eng $c MiAaPQ
100 1 $a Aryee, Dennis. $3 1187213
245 1 0 $a Tunneling Magnetoresistance in Iron (Fe) / Topological Insulator / Iron (Fe).
264 0 $c 2017
300 $a 1 online resource (48 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 56-06.
500 $a Adviser: Dereje Seifu.
502 $a Thesis (M.S.)--Morgan State University, 2017.
504 $a Includes bibliographical references
520 $a Tri-layer thin films of iron (Fe) with topological insulator (TI) as a buffer, Fe/TI/Fe was synthesized using magnetron DC/RF sputtering on MgO (100) substrate at a substrate temperature of 100°C with Bi2Te3. The topological insulator, used as a buffer layer is Bi2Te3. The multilayered samples thus produced were studied using an in-house built magneto-optic Kerr effect (MOKE) instrument, vibrating sample magnetometer (VSM), magnetic force microscopy (MFM), and torque magnetometer (TMM). Further analysis was made by probe measurements and Physical Property Measurements System (PPMS) to measure electrical conductivity properties.
520 $a This system that is Fe/TI/Fe on MgO (100) substrate is a tunnel magnetoresistance (TMR) structure and used in magnetic tunnel junction (MTJ) devices. TMR effect is a phenomenon whereby MTJs have applications such as magneto-resistive random access memory (MRAM), magnetic sensors, and logic devices. The purpose of this research is to measure the magnetic anisotropy of Fe/TI/Fe structural properties and correlate it to magneto-resistance. In this thesis, results from MOKE, VSM, MFM, TMM, and magnetoresistance measurements will be presented with study on Fe/ Bi2Te3 /Fe /MgO(100) synthesized at 100°C. In this structure Fe/TI/Fe each Fe layer is 50 nm thick and the TI is 5mm.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Physics. $3 564049
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
690 $a 0605
690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Morgan State University. $b Physics. $3 1187214
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10262710 $z click for full text (PQDT)

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