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High-efficiency Light-emitting Devic...
~
University of California, Santa Barbara.
High-efficiency Light-emitting Devices based on Semipolar III-Nitrides.
紀錄類型:
書目-語言資料,手稿 : Monograph/item
正題名/作者:
High-efficiency Light-emitting Devices based on Semipolar III-Nitrides./
作者:
Oh, Sang Ho.
面頁冊數:
1 online resource (142 pages)
附註:
Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
標題:
Electrical engineering. -
電子資源:
click for full text (PQDT)
ISBN:
9781369716016
High-efficiency Light-emitting Devices based on Semipolar III-Nitrides.
Oh, Sang Ho.
High-efficiency Light-emitting Devices based on Semipolar III-Nitrides.
- 1 online resource (142 pages)
Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
Thesis (Ph.D.)--University of California, Santa Barbara, 2017.
Includes bibliographical references
In the future, the light-emitting diodes (LEDs) are expected to fully penetrate into the lighting market. A tremendous amount of energy will be saved through the LED-based lighting. Apparently, the amount of the energy saving strongly depends on the efficiency of the LEDs: this dissertation is all about the efficiency.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9781369716016Subjects--Topical Terms:
596380
Electrical engineering.
Index Terms--Genre/Form:
554714
Electronic books.
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Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
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Adviser: Steven P. DenBaars.
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Thesis (Ph.D.)--University of California, Santa Barbara, 2017.
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Includes bibliographical references
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In the future, the light-emitting diodes (LEDs) are expected to fully penetrate into the lighting market. A tremendous amount of energy will be saved through the LED-based lighting. Apparently, the amount of the energy saving strongly depends on the efficiency of the LEDs: this dissertation is all about the efficiency.
520
$a
First, the III-nitride LEDs grown on free-standing semipolar (202¯1¯) GaN substrates will be discussed. In many studies, LEDs grown on semipolar III-nitride substrates exhibited high efficiency at high current density. In this dissertation, "droop-free" (202¯1¯) blue LEDs will be demonstrated, especially for the standard industrial chip size.
520
$a
In addition, contact optimization process for (202¯1¯) LEDs will be discussed. Series resistance of the (202¯1¯) LED devices has been improved through the contact optimization. As a result, the wall-plug efficiency (WPE) of the device was boosted by ∼50%, compared to that of the previously reported (202¯1¯) LEDs.
520
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Also, chip shaping for the semipolar LEDs to enhance the extraction efficiency will be covered as well. A new mesa design will be introduced, and the cleaving scheme for semipolar LED wafers will be thoroughly discussed.
520
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Lastly, as a future work, selective area growth of ZnO light extraction features will be introduced and its preliminary result will be demonstrated.
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Mode of access: World Wide Web
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click for full text (PQDT)
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