國立虎尾科技大學 |

Micro Photoluminescence Study of Axial GaAsSb Nanowires by Molecular Beam Epitaxy for Wide Array of Information.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Micro Photoluminescence Study of Axial GaAsSb Nanowires by Molecular Beam Epitaxy for Wide Array of Information./
作者:	Hafiz, Shihab Bin.
面頁冊數:	1 online resource (69 pages)
附註:	Source: Masters Abstracts International, Volume: 56-04.
標題:	Nanotechnology. -
電子資源:	click for full text (PQDT)
ISBN:	9781369851069

Micro Photoluminescence Study of Axial GaAsSb Nanowires by Molecular Beam Epitaxy for Wide Array of Information.
Hafiz, Shihab Bin.

Micro Photoluminescence Study of Axial GaAsSb Nanowires by Molecular Beam Epitaxy for Wide Array of Information. - 1 online resource (69 pages)

Source: Masters Abstracts International, Volume: 56-04.

Thesis (M.S.)--North Carolina Agricultural and Technical State University, 2017.

Includes bibliographical references

Nanowires (NWs) have gained significant attention due to their potential for enhanced performance in optoelectronic devices and optical telecommunication applications. III-V NWs, in particular, are very attractive for these applications due to their high intrinsic mobility, tunable bandgap, high absorption coefficient and strain tolerance. In this thesis, use of micro photoluminescence (mu-PL) spectroscopy on axial GaAsSb NWs grown by molecular beam epitaxy (MBE) has been demonstrated to obtain a wide array of information. Effect of Sb composition was studied for bandgap tuning in which bandgap of 1.13 eV has been demonstrated for 16 at. % Sb. Effect of AlGaAs passivation layer was investigated by PL and shown to improve optical quality of NWs. Single nanowire PL measurement confirmed compositional homogeneity in the ensemble NWs. Patterned NWs with increasing pitch length were analyzed for band gap tuning by PL spectra. Laser excitation dependent PL of the NWs revealed a change in the nature of the optical transitions from type II to type I with increase in Sb composition. Temperature dependent PL analysis in the temperature range from 4 K to 293 K provided explanation on the nature of recombination mechanisms and defects. Finally, tellurium (Te) incorporation in GaAsSb NWs was investigated by mu-PL spectroscopy to study the effect of doping. Narrow PL peak with high PL emission and room temperature PL of good intensity were indicative of growth of good quality NWs by MBE. Thus, (mu-PL) spectroscopy has been shown to be a powerful contactless tool for the investigation of opto-electronic properties of the NWs.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369851069Subjects--Topical Terms:

557660
Nanotechnology.
Index Terms--Genre/Form:

554714
Electronic books.

Micro Photoluminescence Study of Axial GaAsSb Nanowires by Molecular Beam Epitaxy for Wide Array of Information.
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500 $a Adviser: Shanthi Iyer.
502 $a Thesis (M.S.)--North Carolina Agricultural and Technical State University, 2017.
504 $a Includes bibliographical references
520 $a Nanowires (NWs) have gained significant attention due to their potential for enhanced performance in optoelectronic devices and optical telecommunication applications. III-V NWs, in particular, are very attractive for these applications due to their high intrinsic mobility, tunable bandgap, high absorption coefficient and strain tolerance. In this thesis, use of micro photoluminescence (mu-PL) spectroscopy on axial GaAsSb NWs grown by molecular beam epitaxy (MBE) has been demonstrated to obtain a wide array of information. Effect of Sb composition was studied for bandgap tuning in which bandgap of 1.13 eV has been demonstrated for 16 at. % Sb. Effect of AlGaAs passivation layer was investigated by PL and shown to improve optical quality of NWs. Single nanowire PL measurement confirmed compositional homogeneity in the ensemble NWs. Patterned NWs with increasing pitch length were analyzed for band gap tuning by PL spectra. Laser excitation dependent PL of the NWs revealed a change in the nature of the optical transitions from type II to type I with increase in Sb composition. Temperature dependent PL analysis in the temperature range from 4 K to 293 K provided explanation on the nature of recombination mechanisms and defects. Finally, tellurium (Te) incorporation in GaAsSb NWs was investigated by mu-PL spectroscopy to study the effect of doping. Narrow PL peak with high PL emission and room temperature PL of good intensity were indicative of growth of good quality NWs by MBE. Thus, (mu-PL) spectroscopy has been shown to be a powerful contactless tool for the investigation of opto-electronic properties of the NWs.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
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650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
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710 2 $a North Carolina Agricultural and Technical State University. $b Nanoengineering. $3 1187223
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