國立虎尾科技大學 |

Auger Recombination in 111-V Semiconductors.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Auger Recombination in 111-V Semiconductors./
Author:	Williams, Kristopher Wayne.
Description:	1 online resource (94 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
Subject:	Materials science. -
Online resource:	click for full text (PQDT)
ISBN:	9781369699036

Auger Recombination in 111-V Semiconductors.
Williams, Kristopher Wayne.

Auger Recombination in 111-V Semiconductors. - 1 online resource (94 pages)

Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.

Thesis (Ph.D.)--Columbia University, 2017.

Includes bibliographical references

The radiationless recombination of electron-hole pairs in semiconductors is inherently detrimental to the operation of optoelectronic technologies. Auger recombination, a prominent many-body scattering mechanism, facilitates efficient non-radiative recombination by transferring the released energy and momentum to a third carrier. In this thesis, ultrafast time-resolved two-photon photoemission is used to investigate the action of carriers subject to Auger scattering in two III-V semiconductor material systems, InGaN quantum well light-emitting diodes and bulk GaSb. In InGaN quantum wells, Auger recombination is believed to limit the radiative quantum efficiency at high carrier injection currents. Chapter 3 reports the direct observation of carrier loss from a single InGaN quantum well due to Auger recombination on the picosecond timescale. Selective excitations of the different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective band mass decreases, confirming the critical role of momentum conservation in the Auger process. In Chapter 4, photoemission is used to directly detect Auger electrons as they scatter into high energy and momentum states of the GaSb conduction band. The Auger rate in GaSb is observed to be modulated by a coherent phonon mode at 2 THz, confirming phonon participation in momentum conservation. The commonly assumed Auger rate constant is also found to vary significantly, decreasing by four orders of magnitude as hot electrons cool by ~90 meV. These findings provide quantitative guidance in understanding Auger recombination and in designing a broader range of materials for efficient optoelectronics.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369699036Subjects--Topical Terms:

557839
Materials science.
Index Terms--Genre/Form:

554714
Electronic books.

Auger Recombination in 111-V Semiconductors.
LDR:02847ntm a2200337K 4500 001 914126
005 20180703084422.5
006 m o u
007 cr mn||||a|a||
008 190606s2017 xx obm 000 0 eng d
020 $a 9781369699036
035 $a (MiAaPQ)AAI10266246
035 $a (MiAaPQ)columbia:13845
035 $a AAI10266246
040 $a MiAaPQ $b eng $c MiAaPQ
100 1 $a Williams, Kristopher Wayne. $3 1187239
245 1 0 $a Auger Recombination in 111-V Semiconductors.
264 0 $c 2017
300 $a 1 online resource (94 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
500 $a Adviser: Xiaoyang Zhu.
502 $a Thesis (Ph.D.)--Columbia University, 2017.
504 $a Includes bibliographical references
520 $a The radiationless recombination of electron-hole pairs in semiconductors is inherently detrimental to the operation of optoelectronic technologies. Auger recombination, a prominent many-body scattering mechanism, facilitates efficient non-radiative recombination by transferring the released energy and momentum to a third carrier. In this thesis, ultrafast time-resolved two-photon photoemission is used to investigate the action of carriers subject to Auger scattering in two III-V semiconductor material systems, InGaN quantum well light-emitting diodes and bulk GaSb. In InGaN quantum wells, Auger recombination is believed to limit the radiative quantum efficiency at high carrier injection currents. Chapter 3 reports the direct observation of carrier loss from a single InGaN quantum well due to Auger recombination on the picosecond timescale. Selective excitations of the different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective band mass decreases, confirming the critical role of momentum conservation in the Auger process. In Chapter 4, photoemission is used to directly detect Auger electrons as they scatter into high energy and momentum states of the GaSb conduction band. The Auger rate in GaSb is observed to be modulated by a coherent phonon mode at 2 THz, confirming phonon participation in momentum conservation. The commonly assumed Auger rate constant is also found to vary significantly, decreasing by four orders of magnitude as hot electrons cool by ~90 meV. These findings provide quantitative guidance in understanding Auger recombination and in designing a broader range of materials for efficient optoelectronics.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
650 4 $a Physics. $3 564049
650 4 $a Condensed matter physics. $3 1148471
655 7 $a Electronic books. $2 local $3 554714
690 $a 0794
690 $a 0605
690 $a 0611
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Columbia University. $b Chemical Physics. $3 1186670
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10266246 $z click for full text (PQDT)