國立虎尾科技大學 |

Development and Characterization of Hybrid SiC Power Devices.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Development and Characterization of Hybrid SiC Power Devices./
作者:	Song, Xiaoqing.
面頁冊數:	1 online resource (183 pages)
附註:	Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9781369857085

Development and Characterization of Hybrid SiC Power Devices.
Song, Xiaoqing.

Development and Characterization of Hybrid SiC Power Devices. - 1 online resource (183 pages)

Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.

Thesis (Ph.D.)--North Carolina State University, 2017.

Includes bibliographical references

Power semiconductor devices are recognized as the fundamental element for all power electronics systems and are playing an increasingly more important role in achieving energy savings while enabling people to enjoy a comfortable life style in a further electrified world. Recently, the wide bandgap semiconductors such as the silicon carbide (SiC) have earned great attentions, due to the inherent material advantages over silicon (Si). SiC power devices can easily reach 1.2 kV or even 15 kV breakdown voltages, maintaining a low specific conduction resistances and fast switching speed. However, the much higher cost primarily due to the more expensive SiC wafers and fabrication process, impedes its wide adoption in power electronics applications. To address the high cost issue and further improve some devices' performances, the hybrid power switch concept is proposed and summarized in this dissertation, which can combine the advantages of different types of devices and compensate the devices' weakness. In this dissertation, three types of hybrid power switches: FREEDM-Pair, FREEDM Super-Cascode and SiC ETO are designed, developed and characterized, which are based on the Si/SiC hybrid or unipolar/bipolar hybrid or unipolar/unipolar hybrid. The hybrid switch concept provides an effective way to improve the device performances at the expense of relatively low-cost increase.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369857085Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Development and Characterization of Hybrid SiC Power Devices.
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500 $a Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
500 $a Adviser: Alex Q. Huang.
502 $a Thesis (Ph.D.)--North Carolina State University, 2017.
504 $a Includes bibliographical references
520 $a Power semiconductor devices are recognized as the fundamental element for all power electronics systems and are playing an increasingly more important role in achieving energy savings while enabling people to enjoy a comfortable life style in a further electrified world. Recently, the wide bandgap semiconductors such as the silicon carbide (SiC) have earned great attentions, due to the inherent material advantages over silicon (Si). SiC power devices can easily reach 1.2 kV or even 15 kV breakdown voltages, maintaining a low specific conduction resistances and fast switching speed. However, the much higher cost primarily due to the more expensive SiC wafers and fabrication process, impedes its wide adoption in power electronics applications. To address the high cost issue and further improve some devices' performances, the hybrid power switch concept is proposed and summarized in this dissertation, which can combine the advantages of different types of devices and compensate the devices' weakness. In this dissertation, three types of hybrid power switches: FREEDM-Pair, FREEDM Super-Cascode and SiC ETO are designed, developed and characterized, which are based on the Si/SiC hybrid or unipolar/bipolar hybrid or unipolar/unipolar hybrid. The hybrid switch concept provides an effective way to improve the device performances at the expense of relatively low-cost increase.
520 $a Firstly, the dissertation gives an overview and classification of different types of hybrid power switches. Some typical examples of the different types of hybrid power switches are enumerated to explain the merits of the hybrid power switch concept. More focus is placed on the unipolar/bipolar hybrid power switch, due to its superior performances and combination of the advantages of unipolar device's fast switching speed and bipolar device's conductivity modulation.
520 $a The FREEDM-Pair is proposed based on the parallel connection of a SiC MOSFET with a Si IGBT to combine the advantages of the IGBT and the MOSFET. As a Si/SiC and unipolar/bipolar hybrid switch, the FREEDM-Pair can be an ideal and cost effective switch for high power applications, which can greatly reduce the turn-off loss of the Si IGBT. In the proposed FREEDM-Pair, the SiC MOSFET can also be replaced with other SiC unipolar devices, like the JFETs, MESFETs. Two voltage levels (1.2 kV and 6 kV) FREEDM-Pair prototypes are built and characterized to verify the effectiveness of FREEDM-Pair in switching loss reduction. The design considerations of the FREEDM-Pair are discussed and the cost of the FREEDM-Pair is also analyzed.
520 $a A three-terminal FREEDM Super-Cascode is proposed based on the series connection of one SiC MOSFET and several SiC JFETs in cascode configuration. The FREEDM Super-Cascode, as a MOSFET/JFET hybrid switch, provides a viable and cost effective way to achieve high blocking voltages. A 15 kV FREEDM Super-Cascode is designed and developed using twelve 1.2 kV SiC devices connected in series. The design and operation principles of the FREEDM Super-Cascode are presented and the performances including static blocking capability, conduction characteristics at a wide range of temperature, and dynamic switching performances are given and analyzed. In addition, the thermal resistance of the 15 kV FREEDM Super-Cascode is measured and the power dissipation capability is experimentally tested. The FREEDM Super-Cascode demonstrates obvious advantages in cost and thermal dissipation capability compared to the high voltage SiC MOSFET. All the characteristics and experimental results of the FREEDM Super- Cascode verified its feasibility and an ideal candidate for high voltage high switching frequency applications.
520 $a The SiC ETO device, as a Si/SiC and unipolar/bipolar hybrid switch, is based on the combination of a SiC gate turn-off thyristor (GTO) structure and low voltage Si MOSFETs. In this dissertation, a world record 22 kV SiC p-type ETO (p-ETO) thyristor is reported and analyzed as a promising candidate for high voltage applications such as HVDC, FACTS, solid state circuit breakers (SSCBs) and traction systems. Its static performances are analyzed, exhibiting a high voltage blocking characteristics and very low forward voltage drop at a range of temperatures.
520 $a The research on the hybrid power switches indicates an ideal next step for the adoption of high voltage, SiC devices and provides valuable information for the future work on hybrid power switches.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Mechanical engineering. $3 557493
650 4 $a Industrial engineering. $3 679492
655 7 $a Electronic books. $2 local $3 554714
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710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a North Carolina State University. $b Electrical and Computer Engineering. $3 1148585
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