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Solution processed infrared photodet...
~
Lee, Jae Woong.
Solution processed infrared photodetector based on quantum dots with photocurrent amplification.
紀錄類型:
書目-語言資料,手稿 : Monograph/item
正題名/作者:
Solution processed infrared photodetector based on quantum dots with photocurrent amplification./
作者:
Lee, Jae Woong.
面頁冊數:
1 online resource (114 pages)
附註:
Source: Dissertation Abstracts International, Volume: 77-08(E), Section: B.
標題:
Nanotechnology. -
電子資源:
click for full text (PQDT)
ISBN:
9781339540252
Solution processed infrared photodetector based on quantum dots with photocurrent amplification.
Lee, Jae Woong.
Solution processed infrared photodetector based on quantum dots with photocurrent amplification.
- 1 online resource (114 pages)
Source: Dissertation Abstracts International, Volume: 77-08(E), Section: B.
Thesis (Ph.D.)--University of Florida, 2013.
Includes bibliographical references
The remarkable price drop in high cost infrared detectors can be expected with recent advances in colloidal quantum dots (CQDs) and organic light emitting diodes (OLED). Both have several advantages such as cost-effective, easy solution processing, and compatibility with large area and flexible device manufacturing. Easy control of the solutions enables the layer-deposition with spin coating, spray coating, and roll-to-roll processing. It is also possible to apply on flexible and curved substrates. When OLED is applied for the infrared photodetectors as light emitters, it is possible to industrialize the infrared optical imaging devices with low cost.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9781339540252Subjects--Topical Terms:
557660
Nanotechnology.
Index Terms--Genre/Form:
554714
Electronic books.
Solution processed infrared photodetector based on quantum dots with photocurrent amplification.
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Solution processed infrared photodetector based on quantum dots with photocurrent amplification.
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Adviser: Franky So.
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Thesis (Ph.D.)--University of Florida, 2013.
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Includes bibliographical references
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The remarkable price drop in high cost infrared detectors can be expected with recent advances in colloidal quantum dots (CQDs) and organic light emitting diodes (OLED). Both have several advantages such as cost-effective, easy solution processing, and compatibility with large area and flexible device manufacturing. Easy control of the solutions enables the layer-deposition with spin coating, spray coating, and roll-to-roll processing. It is also possible to apply on flexible and curved substrates. When OLED is applied for the infrared photodetectors as light emitters, it is possible to industrialize the infrared optical imaging devices with low cost.
520
$a
The infrared detector based on CQDs have high dark currents due to the narrow bandgap of crystals. With hybrid blocking layers, dark current can be reduced significantly. On the structure of photodetector, OLED was deposited using evaporation. ZnO can block the injection of holes from outer circuit; the up-conversion devices can persist up to 17 V. Upon excitation with the infrared light, the device activates at voltages 7 V with an onset of green light emission. However, maximum photon to photon conversion is 1.3 % at peak wavelength. One reasons for the low efficiency is surface traps of the nanocrystals. The trap sites act as recombination centers and thereby, degrade the conversion efficiency.
520
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In the dissertation, new approaches to enhance the performance of the CQDs for infrared photodetectors are investigated. Instead of PbSe for CQDs, PbS CQDs are used due to better stability in air. Conventional hot injection method was modified, and long term "size focused" stage can be achieved with narrow size distribution. Slow growth conditions provide nanocrystals with high quality, which improves the performances of devices.
520
$a
In order to increase the photon to electron efficiency, photocurrent amplification is investigated. The efficiency can be enhanced by modification of the interface between organic layer and metal electrode. The electrical states at this interface were totally changed by metal diffusion into the organic layer and they work as hole trap sites. Photon to electron efficiency was observed to increase more than 16,000 %. The highest specific detectivity was achieved of 7.0x1013 Jones.
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Ann Arbor, Mich. :
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2018
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Mode of access: World Wide Web
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Nanotechnology.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10035794
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click for full text (PQDT)
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