國立虎尾科技大學 |

Design, Evaluation and Co-optimization of Emerging Devices and Circuits.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Design, Evaluation and Co-optimization of Emerging Devices and Circuits./
作者:	Wang, Shaodi.
面頁冊數:	1 online resource (227 pages)
附註:	Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
標題:	Computer engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9781369846829

Design, Evaluation and Co-optimization of Emerging Devices and Circuits.
Wang, Shaodi.

Design, Evaluation and Co-optimization of Emerging Devices and Circuits. - 1 online resource (227 pages)

Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.

Thesis (Ph.D.)--University of California, Los Angeles, 2017.

Includes bibliographical references

The continued push for traditional Silicon technology scaling faces the main challenge of non-scaling power density. Exploring alternative power-efficient technologies is essential for sustaining technology development. Many emerging technologies have been proposed as potential replacement for Silicon technology. However, these emerging technologies need rigorous evaluation in the contexts of circuits and systems to identify their value prior to commercial investment. We have developed evaluation frameworks covering emerging Boolean logic devices, memory devices, memory systems, and integration technologies. The evaluation metrics are in terms of delay, power, and reliability. According to the evaluation results, the development of emerging Boolean logic devices is still far from being able to replace Silicon technology, but magnetic random access memory (MRAM) is a promising memory technology showing benefits in performance and energy-efficiency.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369846829Subjects--Topical Terms:

569006
Computer engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Design, Evaluation and Co-optimization of Emerging Devices and Circuits.
LDR:02903ntm a2200325K 4500 001 915313
005 20180727125212.5
006 m o u
007 cr mn||||a|a||
008 190606s2017 xx obm 000 0 eng d
020 $a 9781369846829
035 $a (MiAaPQ)AAI10284410
035 $a (MiAaPQ)ucla:15396
035 $a AAI10284410
040 $a MiAaPQ $b eng $c MiAaPQ
100 1 $a Wang, Shaodi. $3 1188633
245 1 0 $a Design, Evaluation and Co-optimization of Emerging Devices and Circuits.
264 0 $c 2017
300 $a 1 online resource (227 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
500 $a Adviser: Puneet Gupta.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 2017.
504 $a Includes bibliographical references
520 $a The continued push for traditional Silicon technology scaling faces the main challenge of non-scaling power density. Exploring alternative power-efficient technologies is essential for sustaining technology development. Many emerging technologies have been proposed as potential replacement for Silicon technology. However, these emerging technologies need rigorous evaluation in the contexts of circuits and systems to identify their value prior to commercial investment. We have developed evaluation frameworks covering emerging Boolean logic devices, memory devices, memory systems, and integration technologies. The evaluation metrics are in terms of delay, power, and reliability. According to the evaluation results, the development of emerging Boolean logic devices is still far from being able to replace Silicon technology, but magnetic random access memory (MRAM) is a promising memory technology showing benefits in performance and energy-efficiency.
520 $a As a specific example, we co-optimize MRAM with application circuits and systems. Optimized MRAM write and read design can significantly improve the system performance. We have proposed magnetic tunnel junction (MTJ) based process and temperature variation monitor, which enables variation-aware MRAM write and read optimization. We have also proposed utilizing negative differential resistance (NDR) to enable fast and energy-efficient write and zero-disturbance read for resistive memories including MRAM. In addition, we also design and adapt MRAM technology into low-power stochastic computing system to improve energy-efficiency. To further improve the stochastic computing system, a promising VC-MTJ based true random stochastic bitstream generator is proposed and utilized.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Computer engineering. $3 569006
655 7 $a Electronic books. $2 local $3 554714
690 $a 0464
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of California, Los Angeles. $b Electrical Engineering 0303. $3 845570
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10284410 $z click for full text (PQDT)