國立虎尾科技大學 |

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications./
Author:	Masui, Hisashi.
Description:	1 online resource (283 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8325.
Subject:	Materials science. -
Online resource:	click for full text (PQDT)
ISBN:	9780549363460

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.
Masui, Hisashi.

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications. - 1 online resource (283 pages)

Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8325.

Thesis (Ph.D.)--University of California, Santa Barbara, 2007.

Includes bibliographical references

This dissertation describes research dedicated to the solid-state lighting technology based on III-nitride light-emitting diodes (LEDs). Nitride semiconductors are rather an immature material system compared to conventional III-V semiconductors. As the solid-state lighting technology based on nitride optoelectronic devices becomes widely accepted in the market, solid-state technology is required to compete with the conventional vacuum lighting technology, especially in energy efficiency. In addition to such energy-efficiency requirements, solid-state optoelectronic devices have the potential to explore new applications based on their unique properties.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780549363460Subjects--Topical Terms:

557839
Materials science.
Index Terms--Genre/Form:

554714
Electronic books.

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.
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100 1 $a Masui, Hisashi. $3 1188711
245 1 0 $a Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.
264 0 $c 2007
300 $a 1 online resource (283 pages)
336 $a text $b txt $2 rdacontent
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500 $a Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8325.
500 $a Advisers: Steven P. DenBaars; Shuji Nakamura.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2007.
504 $a Includes bibliographical references
520 $a This dissertation describes research dedicated to the solid-state lighting technology based on III-nitride light-emitting diodes (LEDs). Nitride semiconductors are rather an immature material system compared to conventional III-V semiconductors. As the solid-state lighting technology based on nitride optoelectronic devices becomes widely accepted in the market, solid-state technology is required to compete with the conventional vacuum lighting technology, especially in energy efficiency. In addition to such energy-efficiency requirements, solid-state optoelectronic devices have the potential to explore new applications based on their unique properties.
520 $a The research was conducted as a way of optical characterization of LEDs with a strong emphasis on electroluminescence. Device-packaging techniques were introduced in the early stage of the research to evaluate performances of discrete LEDs including phosphor-combined white-light emitting devices. Light extraction and white-LED fabrication were of direct interest in terms of solid-state lighting, which occupies a large part of the present dissertation. The suspended-LED technique was introduced to improve light extraction and the sphere package was invented as a result of the technique. A phosphor-combined sphere LED achieved as high as 117 lm/W of luminous efficacy.
520 $a Low-temperature characterization is important to evaluate light-emission efficiency of LEDs, especially the internal quantum efficiency. It was a generally known problem that electroluminescence efficiency deteriorates drastically at low temperature where photoluminescence efficiency remains high. High-quality LEDs prepared on GaN bulk substrates that became available during the present project contributed to the low-temperature study, largely to address the problem. Electroluminescence is related to carrier generation processes via low-temperature measurements on such high-quality LEDs. This study produced a model to explain electroluminescence efficiency by unifying temperature, current, and material-quality dependences. Spectral and electrical studies were carried out as well.
520 $a Polarized light emission was characterized on newly emerged nonpolar and semipolar LEDs. Angular characterization was a powerful method on semipolar LEDs. Results of such three-dimensional characterization were successfully related to the band structure of the hexagonal nitride system. Theoretical understanding and experimental observation of such polarized light emission discussed in this dissertation serves the foundation for indicating their potential for liquid-crystal display backlighting as one device application.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
650 4 $a Electrical engineering. $3 596380
650 4 $a Condensed matter physics. $3 1148471
655 7 $a Electronic books. $2 local $3 554714
690 $a 0794
690 $a 0544
690 $a 0611
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of California, Santa Barbara. $b Materials. $3 1187227
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3291326 $z click for full text (PQDT)