國立虎尾科技大學 |

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors : = Electrical and microstructural studies.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors :/
其他題名:	Electrical and microstructural studies.
作者:	Wang, Liang.
面頁冊數:	1 online resource (291 pages)
附註:	Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3196.
Contained By:	Dissertation Abstracts International69-05B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9780549642992

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors : = Electrical and microstructural studies.
Wang, Liang.

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors :Electrical and microstructural studies. - 1 online resource (291 pages)

Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3196.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.

Includes bibliographical references

III-nitride materials hold great promise for high performance microelectronic and optoelectronic applications. The AlGaN/GaN high electron mobility transistors (HEMTs) are capable of handling higher current densities than other III-V HEMTs due to the high density two-dimensional electron gas (2DEG) accumulated at the AlGaN/GaN interface. When combined with the large bandgap, high breakdown voltage, and high carrier velocity, GaN-based materials are excellent candidates for high-power, high-temperature and high-frequency electronic devices. Knowledge of the way in which ohmic properties are determined by the interfacial reaction down to atomic scale at the metal/semiconductor (M/S) interfaces are fundamental concerns in understanding the ohmic formation mechanism and in optimizing the device performances. In order to achieve contact metallization schemes with known and predictable characteristics, focuses of this thesis have been put on contact performance enhancement through extensive properties-parametric testing, on systematic characterization of interfacial structure using analytical cross section TEM, and finally, on carrier transport mechanism determination by variable temperature measurements.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780549642992Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors : = Electrical and microstructural studies.
LDR:03841ntm a2200337Ki 4500 001 915950
005 20180907134544.5
006 m o u
007 cr mn||||a|a||
008 190606s2008 xx obm 000 0 eng d
020 $a 9780549642992
035 $a (MiAaPQ)AAI3314931
035 $a AAI3314931
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Wang, Liang. $3 782849
245 1 0 $a Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors : $b Electrical and microstructural studies.
264 0 $c 2008
300 $a 1 online resource (291 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3196.
500 $a Adviser: Ilesanmi Adesida.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.
504 $a Includes bibliographical references
520 $a III-nitride materials hold great promise for high performance microelectronic and optoelectronic applications. The AlGaN/GaN high electron mobility transistors (HEMTs) are capable of handling higher current densities than other III-V HEMTs due to the high density two-dimensional electron gas (2DEG) accumulated at the AlGaN/GaN interface. When combined with the large bandgap, high breakdown voltage, and high carrier velocity, GaN-based materials are excellent candidates for high-power, high-temperature and high-frequency electronic devices. Knowledge of the way in which ohmic properties are determined by the interfacial reaction down to atomic scale at the metal/semiconductor (M/S) interfaces are fundamental concerns in understanding the ohmic formation mechanism and in optimizing the device performances. In order to achieve contact metallization schemes with known and predictable characteristics, focuses of this thesis have been put on contact performance enhancement through extensive properties-parametric testing, on systematic characterization of interfacial structure using analytical cross section TEM, and finally, on carrier transport mechanism determination by variable temperature measurements.
520 $a Major findings of this work include: (1) Elucidated the interfacial reactions between Al, Ti, AlTi alloy, and Ti/Al/Mo/Au on GaN. (2) Explained the electrical performance of Ti/Al/Mo/Au on AlGaN/GaN based on microstructural investigations. Proposed a "spike" mechanism. (3) Identified the role of other metals, i.e. V, Mo, and Ta, as the first layer for X/Al/Mo/Au contacts. (4) Correlated the surface roughness, lateral encroachment, and contact performance of the Ti/Al/X/Au (X=Ni, Pt, Ir, Mo, Ti and NM) contacts for AlGaN/GaN HEMTs. (5) Tailored the interfacial reaction pathways and electrical performance of Ti/Al/Mo/Au on AlGaN/GaN by incorporating Si into the metallization. Obtained low-resistance contact schemes having wide processing window. (6) Investigated the electrical performance and microstructure of the Ti/Al/Mo/Au contacts on all-binary AlN/GaN HEMTs. Optimized the Ti/Al/Mo/Au contacts on n+-GaN capped AlGaN/AlN/GaN by combined surface treatment and solid state interfacial reaction. (7) Evidenced ultra-shallow Si plasma implantation and dry etch effects of SiCl4 pre-metallization treatment. Demonstrated the best performance by side-way direct contact of the metal with the 2DEG channel. (8) Characterized the carrier transport mechanism by variable temperature measurement between 100 and 375 K.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Illinois at Urbana-Champaign. $3 1184184
773 0 $t Dissertation Abstracts International $g 69-05B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3314931 $z click for full text (PQDT)