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Characterization of high -k dielectrics and interfaces on device reliability.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Characterization of high -k dielectrics and interfaces on device reliability./
作者:	Seo, Hyungtak.
面頁冊數:	1 online resource (144 pages)
附註:	Source: Dissertation Abstracts International, Volume: 69-09, Section: B, page: 5672.
Contained By:	Dissertation Abstracts International69-09B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9780549830382

Characterization of high -k dielectrics and interfaces on device reliability.
Seo, Hyungtak.

Characterization of high -k dielectrics and interfaces on device reliability. - 1 online resource (144 pages)

Source: Dissertation Abstracts International, Volume: 69-09, Section: B, page: 5672.

Thesis (Ph.D.)--North Carolina State University, 2008.

Includes bibliographical references

Transition metal and rare earth elemental and complex oxide high-k dielectrics and their interfaces with Si and Ge substrates were investigated in an effort to (i) understand the physical origin of intrinsic pre-existing, and extrinsic process-induced defects and to thereby, (ii) achieve enhanced reliability in advanced devices such as metal oxide semiconductor capacitors and field effect transistors, MOSCAPs and MOSFETs, respectively.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780549830382Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Characterization of high -k dielectrics and interfaces on device reliability.
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100 1 $a Seo, Hyungtak. $3 1189533
245 1 0 $a Characterization of high -k dielectrics and interfaces on device reliability.
264 0 $c 2008
300 $a 1 online resource (144 pages)
336 $a text $b txt $2 rdacontent
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500 $a Source: Dissertation Abstracts International, Volume: 69-09, Section: B, page: 5672.
500 $a Advisers: Gerald Lucovsky; Calton Osburn.
502 $a Thesis (Ph.D.)--North Carolina State University, 2008.
504 $a Includes bibliographical references
520 $a Transition metal and rare earth elemental and complex oxide high-k dielectrics and their interfaces with Si and Ge substrates were investigated in an effort to (i) understand the physical origin of intrinsic pre-existing, and extrinsic process-induced defects and to thereby, (ii) achieve enhanced reliability in advanced devices such as metal oxide semiconductor capacitors and field effect transistors, MOSCAPs and MOSFETs, respectively.
520 $a Intrinsic pre-existing bonding defects in nanocrystalline high-k dielectrics are associated with discrete energy states near the conduction and valence band edges. These defects are localized at nanocrystalline grain boundaries and have been detected by measurements based on several different spectroscopic techniques including soft X-ray absorption and photoelectron spectroscopies, spectroscopic ellipsometry and internal photoemission spectroscopy. Estimated pre-existing defect densities in nanocrystalline high-k dielectrics by these spectroscopic measurements are typically of order 1012 cm -2 in films that are more than 3 nm thick, but can be reduced by about an order of magnitude in noncrystalline HfSiON dielectrics, and in nanocrystalline films that are ≤ 2nm thick.
520 $a Nanocrystalline LaScO3 films display significant conduction band changes associated with Jahn-Teller (J-T) term splitting of anti-bonding Sc 3d* states as function of increases in grain size for annealing in Ar up to 1000°C. A coherent pi-bonding interaction between Sc 3d and O 2p states in Sc-O octahedrons is responsible for the J-T term splitting, and additionally for the generation of localized defects at grain boundaries when the nanocrystallite size is greater than the 3&sim;4 nm scale of order for this bonding interaction.
520 $a Ni-doping into BaSrTiO3 (BST) changes the local bonding distortion by partial replacement of Ti3+ atoms with Ni2+ in divacancy defect states. This reduces the defect density by a factor of five to seven-fold and shifts the defect states closer to the conduction band edge by &sim; 0.3 eV compared to undoped BST. A significant enhancement of metal-insulator-meta (MIM) capacitor reliability was achieved by suppression, and recovery of symmetry in the MIM leakage current. This increased resistance to dielectric breakdown by shifting the onset by more than 20 V.
520 $a Ge/GeON/HfO2 and HfSiON show significant charge trapping (mid-10 12 &sim; 1013 cm-2) at the interfacial GeON layers. This trapping results from native GeOx, GeON and GeN x layers which have a conduction band offset energy with respect to the Ge substrate that is less than the conduction band offset energy of the HfO2 and HfSiON dielectrics with respect to Ge. The engineering solution for elimination of this potential well charge trapping is by intentional removal of native Ge dielectric interfacial layers. The annealing of nitrided Ge substrates at temperatures between 600°C and 800°C in Ar eliminated the interfacial transition layer Ge-N bonding; however, there is evidence based on medium energy ion scattering (MEIS) that it failed to completely suppress Ge-Hf-O subcutaneous reactions that result in interfacial trapping at levels lower than the GeON, GeOx and GeNx that are introduced in conventional processing with intentionally deposited/or grown native Ge dielectric interfacial layers. Together with NH4OH cleaning, interfacial defect densities at n-Ge/HfSiON gate stacks have been reduced to that levels in the mid-1011 cm -2 that provide a possible engineering solution pathway for Ge n-FETs.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a North Carolina State University. $3 845424
773 0 $t Dissertation Abstracts International $g 69-09B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3329334 $z click for full text (PQDT)