國立虎尾科技大學 |

GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers./
作者:	Evans, Allan Joseph.
面頁冊數:	1 online resource (326 pages)
附註:	Source: Dissertation Abstracts International, Volume: 69-11, Section: B, page: 7026.
Contained By:	Dissertation Abstracts International69-11B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9780549911746

GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers.
Evans, Allan Joseph.

GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers. - 1 online resource (326 pages)

Source: Dissertation Abstracts International, Volume: 69-11, Section: B, page: 7026.

Thesis (Ph.D.)--Northwestern University, 2008.

Includes bibliographical references

The semiconductor-based Quantum Cascade Laser (QCL) offers several key advantages over gas lasers, solid-state lasers, and other semiconductor-based mid-infrared lasers. While the QCL has historically operated best in the lambda &sim; 7-9 mum range using InP-based materials, a major challenge has been to achieve a high-power, room-temperature continuous-wave (CW) operation at shorter wavelengths. Historically, short wavelength performance has been limited due to problems of electron confinement, intervalley leakage, waveguide losses, and high power density. The goal of this work is to overcome these limitations using strain-balanced GaInAs-AlInAs epitaxial materials on InP as well as enhanced thermal management to extend the QCL operating range to the short wavelength limit (lambda &sim; 3 mum) with high power high temperature operation.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780549911746Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers.
LDR:02838ntm a2200361Ki 4500 001 915978
005 20180907134545.5
006 m o u
007 cr mn||||a|a||
008 190606s2008 xx obm 000 0 eng d
020 $a 9780549911746
035 $a (MiAaPQ)AAI3335605
035 $a (MiAaPQ)northwestern:1911
035 $a AAI3335605
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Evans, Allan Joseph. $3 1189539
245 1 0 $a GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers.
264 0 $c 2008
300 $a 1 online resource (326 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 69-11, Section: B, page: 7026.
500 $a Adviser: Manijeh Razeghi.
502 $a Thesis (Ph.D.)--Northwestern University, 2008.
504 $a Includes bibliographical references
520 $a The semiconductor-based Quantum Cascade Laser (QCL) offers several key advantages over gas lasers, solid-state lasers, and other semiconductor-based mid-infrared lasers. While the QCL has historically operated best in the lambda &sim; 7-9 mum range using InP-based materials, a major challenge has been to achieve a high-power, room-temperature continuous-wave (CW) operation at shorter wavelengths. Historically, short wavelength performance has been limited due to problems of electron confinement, intervalley leakage, waveguide losses, and high power density. The goal of this work is to overcome these limitations using strain-balanced GaInAs-AlInAs epitaxial materials on InP as well as enhanced thermal management to extend the QCL operating range to the short wavelength limit (lambda &sim; 3 mum) with high power high temperature operation.
520 $a This work begins with a discussion of the limitations of lattice-matched QCL growth and the physical background of strain effects on band structure. The fundamental problems with the GasMBE growth and characterization of strained GaInAs-AlInAs-InP materials are addressed. Thermal modeling and package design work is presented to address high power density problems at high temperatures. Experimental laser testing results are presented, including reliability testing. Finally, to demonstrate the commercial potential of the technology developed in this work, an initial system prototype of a widely tunable external cavity (EC-QCL) is presented.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
650 4 $a Optics. $3 595336
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
690 $a 0794
690 $a 0752
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Northwestern University. $b Electrical and Computer Engineering. $3 1186892
773 0 $t Dissertation Abstracts International $g 69-11B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3335605 $z click for full text (PQDT)