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Mechanical properties, fracture and water diffusion in nanoporous low dielectric constant materials.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Mechanical properties, fracture and water diffusion in nanoporous low dielectric constant materials./
Author:	Li, Han.
Description:	1 online resource (174 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4457.
Contained By:	Dissertation Abstracts International71-07B.
Subject:	Materials science. -
Online resource:	click for full text (PQDT)
ISBN:	9781124081625

Mechanical properties, fracture and water diffusion in nanoporous low dielectric constant materials.
Li, Han.

Mechanical properties, fracture and water diffusion in nanoporous low dielectric constant materials. - 1 online resource (174 pages)

Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4457.

Thesis (Ph.D.)--Harvard University, 2010.

Includes bibliographical references

Extendibility of Cu/Low-k integration schemes beyond the 45 nm node requires integration of nanoporous dielectrics with greatly reduced permittivity into the back-end process of integrated circuits (IC). However, existing candidate materials suffer insufficient mechanical integrity and fracture resistance to survive the harsh fabrication flow. Their open pore structure is susceptible to the ingress of various detrimental chemicals during processing. In this work, we investigate these critical challenges that the industry confronts. In chapter 3, the effect of intrinsic porosity effect on the stiffness and fracture toughness are modeled by first separating out effects caused by difference in the matrix material at different levels of porosity, and by then comparing with finite element calculations and physical models. It is demonstrated that the fracture energy of porous organosilicate glasses (OSG) is largely determined by the porosity only. However, the elastic stiffness depends on both porosity and the morphology of the porous structure. Chapter 4 provides quantitative guidelines for the bottom-up design of new organosilicate materials with high modulus and low dielectric constant. Atomistic simulations are conducted to model the strengthening effects of incorporating organic cross-links into the glass network and the detrimental effects of terminal groups. For the first time, it is demonstrated OSG can be made considerably stiffer than amorphous silica, while maintaining a lower mass density, by engineering the network structure. In chapter 5, we investigate the direct impact of water diffusion on the fracture behavior of film stacks that contain nanoporous OSG. We show that exposure of the film stacks to water causes significant degradation of the interfacial adhesion energy without affecting the cohesive fracture energy of the nanoporous OSG layer. Isotope tracer diffusion experiments confirm that water diffuses predominantly along the interfaces, and not through the porous films due to the hydrophilic character of the interfaces.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781124081625Subjects--Topical Terms:

557839
Materials science.
Index Terms--Genre/Form:

554714
Electronic books.

Mechanical properties, fracture and water diffusion in nanoporous low dielectric constant materials.
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035 $a (MiAaPQ)AAI3414843
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100 1 $a Li, Han. $3 1189582
245 1 0 $a Mechanical properties, fracture and water diffusion in nanoporous low dielectric constant materials.
264 0 $c 2010
300 $a 1 online resource (174 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4457.
500 $a Adviser: Joost J. Vlassak.
502 $a Thesis (Ph.D.)--Harvard University, 2010.
504 $a Includes bibliographical references
520 $a Extendibility of Cu/Low-k integration schemes beyond the 45 nm node requires integration of nanoporous dielectrics with greatly reduced permittivity into the back-end process of integrated circuits (IC). However, existing candidate materials suffer insufficient mechanical integrity and fracture resistance to survive the harsh fabrication flow. Their open pore structure is susceptible to the ingress of various detrimental chemicals during processing. In this work, we investigate these critical challenges that the industry confronts. In chapter 3, the effect of intrinsic porosity effect on the stiffness and fracture toughness are modeled by first separating out effects caused by difference in the matrix material at different levels of porosity, and by then comparing with finite element calculations and physical models. It is demonstrated that the fracture energy of porous organosilicate glasses (OSG) is largely determined by the porosity only. However, the elastic stiffness depends on both porosity and the morphology of the porous structure. Chapter 4 provides quantitative guidelines for the bottom-up design of new organosilicate materials with high modulus and low dielectric constant. Atomistic simulations are conducted to model the strengthening effects of incorporating organic cross-links into the glass network and the detrimental effects of terminal groups. For the first time, it is demonstrated OSG can be made considerably stiffer than amorphous silica, while maintaining a lower mass density, by engineering the network structure. In chapter 5, we investigate the direct impact of water diffusion on the fracture behavior of film stacks that contain nanoporous OSG. We show that exposure of the film stacks to water causes significant degradation of the interfacial adhesion energy without affecting the cohesive fracture energy of the nanoporous OSG layer. Isotope tracer diffusion experiments confirm that water diffuses predominantly along the interfaces, and not through the porous films due to the hydrophilic character of the interfaces.
520 $a It is anticipated that the findings of this work will contribute to assess and improve the mechanical reliability of nanoporous low-k dielectrics for current and future IC technologies.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Harvard University. $3 1180437
773 0 $t Dissertation Abstracts International $g 71-07B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3414843 $z click for full text (PQDT)