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Semiconductor nanowire based optoelectronic devices : = Physics, simulation and design.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Semiconductor nanowire based optoelectronic devices :/
Reminder of title:	Physics, simulation and design.
Author:	Hu, Jun.
Description:	1 online resource (131 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 71-02, Section: B, page: 1214.
Contained By:	Dissertation Abstracts International71-02B.
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9781109621457

Semiconductor nanowire based optoelectronic devices : = Physics, simulation and design.
Hu, Jun.

Semiconductor nanowire based optoelectronic devices :Physics, simulation and design. - 1 online resource (131 pages)

Source: Dissertation Abstracts International, Volume: 71-02, Section: B, page: 1214.

Thesis (Ph.D.)--University of California, Santa Cruz, 2009.

Includes bibliographical references

To address the major challenges in continuing the CMOS technology scaling, a wide variety of technologies are pursued by researchers. One of the promising technologies that are being intensively studied worldwide to develop nanoscale optoelectronic devices is the nanowire based technology. To fully explore the potential of this new technology, theoretical understanding of the behaviors and performances of the nanowire based devices is critically important.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781109621457Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Semiconductor nanowire based optoelectronic devices : = Physics, simulation and design.
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100 1 $a Hu, Jun. $3 1062284
245 1 0 $a Semiconductor nanowire based optoelectronic devices : $b Physics, simulation and design.
264 0 $c 2009
300 $a 1 online resource (131 pages)
336 $a text $b txt $2 rdacontent
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500 $a Source: Dissertation Abstracts International, Volume: 71-02, Section: B, page: 1214.
500 $a Adviser: Sung-Mo Kang.
502 $a Thesis (Ph.D.)--University of California, Santa Cruz, 2009.
504 $a Includes bibliographical references
520 $a To address the major challenges in continuing the CMOS technology scaling, a wide variety of technologies are pursued by researchers. One of the promising technologies that are being intensively studied worldwide to develop nanoscale optoelectronic devices is the nanowire based technology. To fully explore the potential of this new technology, theoretical understanding of the behaviors and performances of the nanowire based devices is critically important.
520 $a We have pursued model development and computer-aided numerical simulations to investigate the properties of nanowire based p-n homo junctions, nanowire-metal contacts and double heterostructures (DH) for development of optoelectronic devices. Due to the reduced cross-section of the junctions, nanowire based devices exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringing field effects.
520 $a First the fringing field effects present in p-n junctions of nanowires and nanowire arrays have been studied. It was found that the depletion width increases as the nanowire radius shrinks. Also the fringing field effects on electrical contact resistivity of semiconductor nanowire-metal contacts have been examined for different contact geometries. It is shown that the contact resistivity increases as the nanowire radius decreases due to fringing field effects. This increase is more significant for nanowire-3D metal contacts than for nanowire-1D metal contacts, and is more significant at low temperatures than at high temperatures. Finally the fringing field effects in nanowire based DH have been analyzed. In general, the junction depletion width in the active region increases for nanowire based DH devices. Such effect becomes more significant as the nanowire radius shrinks. Under the forward bias condition, the overall depletion phenomenon becomes suppressed; therefore the fringing field induced difference also becomes less significant. The results can be used to guide the design and fabrications of nanowire based DH lasers.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of California, Santa Cruz. $3 1185267
773 0 $t Dissertation Abstracts International $g 71-02B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3394673 $z click for full text (PQDT)