國立虎尾科技大學 |

Design of Inductorless Low Noise Amplifier.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Design of Inductorless Low Noise Amplifier./
作者:	Huo, Yunsheng.
面頁冊數:	1 online resource (65 pages)
附註:	Source: Masters Abstracts International, Volume: 56-04.
Contained By:	Masters Abstracts International56-04(E).
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9781369852783

Design of Inductorless Low Noise Amplifier.
Huo, Yunsheng.

Design of Inductorless Low Noise Amplifier. - 1 online resource (65 pages)

Source: Masters Abstracts International, Volume: 56-04.

Thesis (M.S.)--Illinois Institute of Technology, 2017.

Includes bibliographical references

With the rapidly increasing number of elements integrated on a single chip. The area on a chip became much costlier. And the difficulty of planning all the elements has been growing. So, decreasing the area cost of each single element became important to be considered. In the conventional technology, to cancel the imaginary part of the input impedance, inductors were used in the design of a LNA. However, inductor is an area consuming element, it would cost most of the chip area. To reduce the area cost of LNA, it is important to reduce the number of inductor, the best case is to design a LNA without any inductor. What's more, without inductor, LNA would be able to work in a wideband frequency, but not a specific narrow-band frequency. But considering the imaginary part of input impedance, the highest frequency would reduce, depending on the of the MOSFET used in the design.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369852783Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Design of Inductorless Low Noise Amplifier.
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100 1 $a Huo, Yunsheng. $3 1191363
245 1 0 $a Design of Inductorless Low Noise Amplifier.
264 0 $c 2017
300 $a 1 online resource (65 pages)
336 $a text $b txt $2 rdacontent
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500 $a Source: Masters Abstracts International, Volume: 56-04.
500 $a Adviser: Yang Xu.
502 $a Thesis (M.S.)--Illinois Institute of Technology, 2017.
504 $a Includes bibliographical references
520 $a With the rapidly increasing number of elements integrated on a single chip. The area on a chip became much costlier. And the difficulty of planning all the elements has been growing. So, decreasing the area cost of each single element became important to be considered. In the conventional technology, to cancel the imaginary part of the input impedance, inductors were used in the design of a LNA. However, inductor is an area consuming element, it would cost most of the chip area. To reduce the area cost of LNA, it is important to reduce the number of inductor, the best case is to design a LNA without any inductor. What's more, without inductor, LNA would be able to work in a wideband frequency, but not a specific narrow-band frequency. But considering the imaginary part of input impedance, the highest frequency would reduce, depending on the of the MOSFET used in the design.
520 $a In this thesis, the design considerations of heterodyne transceiver, which is the most popular architecture in modern RF design, are introduced firstly. Then, to reduce the undesired effect from image signal, a special architecture, called image-ejection architecture, is explained. To implement the proposal function, different architectures are shown. In RF receiver design, Low Noise Amplifier is one of the most important stages in the RX chain. To design a LNA which can meet different requirements of the RX design. Different topologies are explained, including CS stage, CG stage and differential LNA. Besides conventional technique, some up-to-date techniques are also shown, such as modified CG stage. The main propose of this thesis is to design an inductorless LNA. In this LNA design, Noise Canceling technology and Amplifier Enhancement technology were utilized to improve the noise and amplifying performance. After explaining the technologies theoretically, the circuit is simulated in a 65nm technology with working frequency band from 2 to 6 GHz. By the simulation, the gain of the design is beyond 14dB in the whole band, while the noise figure less than 2.8dB.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Illinois Institute of Technology. $b Electrical and Computer Engineering. $3 1179314
773 0 $t Masters Abstracts International $g 56-04(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10271418 $z click for full text (PQDT)