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Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs./
Author:	Tan, Jeffrey Lee.
Description:	1 online resource (148 pages)
Notes:	Source: Masters Abstracts International, Volume: 57-01.
Contained By:	Masters Abstracts International57-01(E).
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9780355451528

Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs.
Tan, Jeffrey Lee.

Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs. - 1 online resource (148 pages)

Source: Masters Abstracts International, Volume: 57-01.

Thesis (M.Engr.)--University of California, Davis, 2017.

Includes bibliographical references

This thesis presents the theory, design, and implementation of two high power (>10 W) RF power amplifiers operating in the S-band (2 to 4 GHz) and employing the Class F mode of efficiency enhancement. The amplifiers are based around gallium nitride (GaN) high electron mobility transistors (HEMTs) which provide the high power capability. A complex wideband design using synthesized low-pass transforming filters as large-bandwidth matching networks is presented, followed by a more elegant narrowband design employing simple stub matching networks for impedance matching and harmonic control.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355451528Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs.
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245 1 0 $a Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs.
264 0 $c 2017
300 $a 1 online resource (148 pages)
336 $a text $b txt $2 rdacontent
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500 $a Source: Masters Abstracts International, Volume: 57-01.
500 $a Adviser: George R. Branner.
502 $a Thesis (M.Engr.)--University of California, Davis, 2017.
504 $a Includes bibliographical references
520 $a This thesis presents the theory, design, and implementation of two high power (>10 W) RF power amplifiers operating in the S-band (2 to 4 GHz) and employing the Class F mode of efficiency enhancement. The amplifiers are based around gallium nitride (GaN) high electron mobility transistors (HEMTs) which provide the high power capability. A complex wideband design using synthesized low-pass transforming filters as large-bandwidth matching networks is presented, followed by a more elegant narrowband design employing simple stub matching networks for impedance matching and harmonic control.
520 $a Also presented in this thesis is a detailed study into the computer modeling of the GaN HEMT devices in order to accurately predict their behavior when integrated into a system. A complete small-signal circuit model is developed which is capable of predicting the scattering parameters of the devices with a high degree of accuracy to the measured behavior. Large-signal device models of increasing complexity are studied to investigate fundamental behaviors of field-effect transistors for which HEMTs are a subset. Finally, the manufacturer design kit's computer model is investigated and verified for accuracy with the measured results.
520 $a An overview of power amplifier design and classes of operation is given, and specifically Class F theory and implementation are analyzed. The efficiency enhancement by waveform shaping is studied, as well as the mechanism of waveform shaping via harmonic manipulation.
520 $a Once fabricated and tested, the wideband design is shown to achieve at least 38.8 dBm output power between 2.2 to 3.3 GHz centered around 2.75 GHz, giving a fractional bandwidth of 40%. Over that range, the PA is able to sustain PAE > 40%, with a peak efficiency of 61%. The narrowband design achieves an output power at its center frequency of 3 GHz of 41.48 dBm, or &sim;14 W, with the PAE achieving a maximum of approximately 66%.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
655 7 $a Electronic books. $2 local $3 554714
690 $a 0544
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of California, Davis. $b Electrical and Computer Engineering. $3 1178925
773 0 $t Masters Abstracts International $g 57-01(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10622749 $z click for full text (PQDT)