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Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon./
Author:	Bhattacharya, Indrasen.
Description:	1 online resource (194 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 79-08(E), Section: B.
Contained By:	Dissertation Abstracts International79-08B(E).
Subject:	Nanotechnology. -
Online resource:	click for full text (PQDT)
ISBN:	9780355831597

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.
Bhattacharya, Indrasen.

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon. - 1 online resource (194 pages)

Source: Dissertation Abstracts International, Volume: 79-08(E), Section: B.

Thesis (Ph.D.)--University of California, Berkeley, 2017.

Includes bibliographical references

III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355831597Subjects--Topical Terms:

557660
Nanotechnology.
Index Terms--Genre/Form:

554714
Electronic books.

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.
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245 1 0 $a Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.
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300 $a 1 online resource (194 pages)
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500 $a Source: Dissertation Abstracts International, Volume: 79-08(E), Section: B.
500 $a Adviser: Connie Chang-Hasnain.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2017.
504 $a Includes bibliographical references
520 $a III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices.
520 $a For the optical transmitter side of the photonic link, InGaAs quantum wells have been grown in a core-shell manner within InP nanopillars. Position-controlled growth with varying pitch is used to systematically control emission wavelength across the same growth substrate. These nanopillars have been fabricated into electrically-injected quantum well in nanopillar LEDs operating within the silicon transparent 1400--1550 nm spectral window and efficiently emitting micro-watts of power. A high quality factor (Q ~ 1000) undercut cavity quantum well nanolaser is demonstrated, operating in the silicon-transparent wavelength range up to room temperature under optical excitation.
520 $a We also demonstrate an InP nanopillar phototransistor as a sensitive, low-capacitance photoreceiver for the energy-efficient operation of a complete optical link. Efficient absorption in a compact single nanopillar InP photo-BJT leads to a simultaneously high responsivity of 9.5 A/W and high 3dB-bandwidth of 7 GHz.
520 $a For photovoltaic energy harvesting, a sparsely packed InP nanopillar array can absorb ~90% of the incident light because of the large absorption cross section of these near-wavelength nanopillars. Experimental data based on wavelength and angle resolved integrating sphere measurements will be presented to discuss the nearly omnidirectional absorption properties of these nanopillar arrays.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Nanotechnology. $3 557660
650 4 $a Optics. $3 595336
650 4 $a Nanoscience. $3 632473
655 7 $a Electronic books. $2 local $3 554714
690 $a 0652
690 $a 0752
690 $a 0565
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of California, Berkeley. $b Applied Science & Technology. $3 1193293
773 0 $t Dissertation Abstracts International $g 79-08B(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10685771 $z click for full text (PQDT)