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Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications./
Author:	Desai, Vishal.
Description:	1 online resource (130 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
Contained By:	Dissertation Abstracts International78-10B(E).
Subject:	Nanotechnology. -
Online resource:	click for full text (PQDT)
ISBN:	9781369813333

Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
Desai, Vishal.

Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications. - 1 online resource (130 pages)

Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2017.

Includes bibliographical references

Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in this novel EBL-SADP approach. Moreover, to transition towards high volume manufacturing, a commercial Extreme Ultra Violet (EUV) scanner was used to develop high-resolution HSQ patterning (18 to 10 nm) with a simplified patterning stack. Resolution of 10 nm lines on 21 nm spacing was obtained for sub-dense patterns and 18 nm dense patterns were partially resolved. Lastly, a novel HSQ based EUV-SADP approach was demonstrated, which provides a potential pathway towards obtaining resolution beyond the limitation of commercial EUV scanners (sub 15 nm dense), along with a reduction in total processing steps.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9781369813333Subjects--Topical Terms:

557660
Nanotechnology.
Index Terms--Genre/Form:

554714
Electronic books.

Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
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245 1 0 $a Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
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300 $a 1 online resource (130 pages)
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500 $a Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
500 $a Adviser: Dr. Nathaniel Cady.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2017.
504 $a Includes bibliographical references
520 $a Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in this novel EBL-SADP approach. Moreover, to transition towards high volume manufacturing, a commercial Extreme Ultra Violet (EUV) scanner was used to develop high-resolution HSQ patterning (18 to 10 nm) with a simplified patterning stack. Resolution of 10 nm lines on 21 nm spacing was obtained for sub-dense patterns and 18 nm dense patterns were partially resolved. Lastly, a novel HSQ based EUV-SADP approach was demonstrated, which provides a potential pathway towards obtaining resolution beyond the limitation of commercial EUV scanners (sub 15 nm dense), along with a reduction in total processing steps.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Nanotechnology. $3 557660
650 4 $a Nanoscience. $3 632473
655 7 $a Electronic books. $2 local $3 554714
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690 $a 0565
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1182550
773 0 $t Dissertation Abstracts International $g 78-10B(E).
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10282076 $z click for full text (PQDT)