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Novel Uses of Directly Patternable S...
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ProQuest Information and Learning Co.
Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
紀錄類型:
書目-語言資料,手稿 : Monograph/item
正題名/作者:
Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications./
作者:
Desai, Vishal.
面頁冊數:
1 online resource (130 pages)
附註:
Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
Contained By:
Dissertation Abstracts International78-10B(E).
標題:
Nanotechnology. -
電子資源:
click for full text (PQDT)
ISBN:
9781369813333
Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
Desai, Vishal.
Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
- 1 online resource (130 pages)
Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
Thesis (Ph.D.)--State University of New York at Albany, 2017.
Includes bibliographical references
Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in this novel EBL-SADP approach. Moreover, to transition towards high volume manufacturing, a commercial Extreme Ultra Violet (EUV) scanner was used to develop high-resolution HSQ patterning (18 to 10 nm) with a simplified patterning stack. Resolution of 10 nm lines on 21 nm spacing was obtained for sub-dense patterns and 18 nm dense patterns were partially resolved. Lastly, a novel HSQ based EUV-SADP approach was demonstrated, which provides a potential pathway towards obtaining resolution beyond the limitation of commercial EUV scanners (sub 15 nm dense), along with a reduction in total processing steps.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9781369813333Subjects--Topical Terms:
557660
Nanotechnology.
Index Terms--Genre/Form:
554714
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Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in this novel EBL-SADP approach. Moreover, to transition towards high volume manufacturing, a commercial Extreme Ultra Violet (EUV) scanner was used to develop high-resolution HSQ patterning (18 to 10 nm) with a simplified patterning stack. Resolution of 10 nm lines on 21 nm spacing was obtained for sub-dense patterns and 18 nm dense patterns were partially resolved. Lastly, a novel HSQ based EUV-SADP approach was demonstrated, which provides a potential pathway towards obtaining resolution beyond the limitation of commercial EUV scanners (sub 15 nm dense), along with a reduction in total processing steps.
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