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Thermal Quenching of Photoluminescen...
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Virginia Commonwealth University.
Thermal Quenching of Photoluminescence in ZnO and GaN.
紀錄類型:
書目-語言資料,手稿 : Monograph/item
正題名/作者:
Thermal Quenching of Photoluminescence in ZnO and GaN./
作者:
Albarakati, Nahla Mubarak.
面頁冊數:
1 online resource (113 pages)
附註:
Source: Dissertation Abstracts International, Volume: 79-01(E), Section: B.
Contained By:
Dissertation Abstracts International79-01B(E).
標題:
Physics. -
電子資源:
click for full text (PQDT)
ISBN:
9780355205831
Thermal Quenching of Photoluminescence in ZnO and GaN.
Albarakati, Nahla Mubarak.
Thermal Quenching of Photoluminescence in ZnO and GaN.
- 1 online resource (113 pages)
Source: Dissertation Abstracts International, Volume: 79-01(E), Section: B.
Thesis (Ph.D.)--Virginia Commonwealth University, 2017.
Includes bibliographical references
Investigation of the thermal quenching of photoluminescence (PL) in semiconductors provides valuable information on identity and characteristics of point defects in these materials, which helps to better understand and improve the properties of semiconductor materials and devices. Abrupt and tunable thermal quenching (ATQ) of PL is a relatively new phenomenon with an unusual behavior of PL. This mechanism was able to explain what a traditional model failed to explain. Usually, in traditional model used to explain "normal" quenching, the slope of PL quenching in the Arrhenius plot determines the ionization energy of the defect causing the PL band. However, in abrupt quenching when the intensity of PL decreases by several orders of magnitude within a small range of temperature, the slope in the Arrhenius plot has no relation to the ionization energy of any defect. It is not known a priori if the thermal quenching of a particular PL band is normal or abrupt and tunable. Studying new cases of unusual thermal quenching, classifying and explaining them helps to predict new cases and understand deeper the ATQ mechanism of PL thermal quenching. Very few examples of abrupt and tunable quenching of PL in semiconductors can be found in literature. The abrupt and tunable thermal quenching, reported here for the first time for high-resistivity ZnO, provides an evidence to settle the dispute concerning the energy position of the Li Zn acceptor. In high-resistivity GaN samples, the common PL bands related to defects are the yellow luminescence (YL) band and a broad band in the blue spectral region (BL2). In this work, we report for the first time the observation of abrupt and tunable thermal quenching of the YL band in GaN. The activation energies for the YL and BL2 bands calculated through the new mechanism show agreement with the reported values. From this study we predict that the ATQ phenomenon is quite common for high-resistivity semiconductors.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018
Mode of access: World Wide Web
ISBN: 9780355205831Subjects--Topical Terms:
564049
Physics.
Index Terms--Genre/Form:
554714
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Thermal Quenching of Photoluminescence in ZnO and GaN.
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Source: Dissertation Abstracts International, Volume: 79-01(E), Section: B.
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Investigation of the thermal quenching of photoluminescence (PL) in semiconductors provides valuable information on identity and characteristics of point defects in these materials, which helps to better understand and improve the properties of semiconductor materials and devices. Abrupt and tunable thermal quenching (ATQ) of PL is a relatively new phenomenon with an unusual behavior of PL. This mechanism was able to explain what a traditional model failed to explain. Usually, in traditional model used to explain "normal" quenching, the slope of PL quenching in the Arrhenius plot determines the ionization energy of the defect causing the PL band. However, in abrupt quenching when the intensity of PL decreases by several orders of magnitude within a small range of temperature, the slope in the Arrhenius plot has no relation to the ionization energy of any defect. It is not known a priori if the thermal quenching of a particular PL band is normal or abrupt and tunable. Studying new cases of unusual thermal quenching, classifying and explaining them helps to predict new cases and understand deeper the ATQ mechanism of PL thermal quenching. Very few examples of abrupt and tunable quenching of PL in semiconductors can be found in literature. The abrupt and tunable thermal quenching, reported here for the first time for high-resistivity ZnO, provides an evidence to settle the dispute concerning the energy position of the Li Zn acceptor. In high-resistivity GaN samples, the common PL bands related to defects are the yellow luminescence (YL) band and a broad band in the blue spectral region (BL2). In this work, we report for the first time the observation of abrupt and tunable thermal quenching of the YL band in GaN. The activation energies for the YL and BL2 bands calculated through the new mechanism show agreement with the reported values. From this study we predict that the ATQ phenomenon is quite common for high-resistivity semiconductors.
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