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Layered two-dimensional heterostructures and their tunneling characteristics

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Layered two-dimensional heterostructures and their tunneling characteristics/ by Sergio C. de la Barrera.
作者:	Barrera, Sergio C. de la.
出版者:	Cham :Springer International Publishing : : 2017.,
面頁冊數:	xvii, 141 p. :ill., digital ; : 24 cm.;
Contained By:	Springer eBooks
標題:	Tunneling (Physics) -
電子資源:	http://dx.doi.org/10.1007/978-3-319-69257-9
ISBN:	9783319692579

Layered two-dimensional heterostructures and their tunneling characteristics
Barrera, Sergio C. de la.

Layered two-dimensional heterostructures and their tunneling characteristics[electronic resource] /by Sergio C. de la Barrera. - Cham :Springer International Publishing :2017. - xvii, 141 p. :ill., digital ;24 cm. - Springer theses, recognizing outstanding Ph.D. research,2190-5053. - Springer theses, recognizing outstanding Ph.D. research..

This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene, hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting interlayer transport phenomena. Low-energy electron microscopy is employed to study the surface of atomically thin WSe2 prepared by metal-organic chemical vapor deposition on epitaxial graphene substrates, and a method for unambiguously measuring the number of atomic layers is presented. Using very low-energy electrons to probe the surface of similar heterostructures, a relationship between extracted work function differences from the layers and the nature of the electrical contact between them is revealed. An extension of this analysis is applied to surface studies of MoSe2 prepared by molecular beam epitaxy on epitaxial graphene. A large work function difference is measured between the MoSe2 and graphene, and a model is provided which suggests that this observation results from an exceptional defect density in the MoSe2 film. The thesis expounds a theory for computing tunneling currents between two-dimensional crystals separated by a thin insulating barrier; a few situations resulting in resonant tunneling and negative differential resistance are illustrated by computed examples, as well as observed characteristics, for monolayer and bilayer graphene tunneling junctions and transistors.

ISBN: 9783319692579

Standard No.: 10.1007/978-3-319-69257-9doiSubjects--Topical Terms:

596114
Tunneling (Physics)

LC Class. No.: QC176.8.T8

Dewey Class. No.: 530.416

Layered two-dimensional heterostructures and their tunneling characteristics
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