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Spectroscopy of complex oxide interfaces = photoemission and related spectroscopies /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Spectroscopy of complex oxide interfaces/ edited by Claudia Cancellieri, Vladimir N. Strocov.
Reminder of title:	photoemission and related spectroscopies /
other author:	Cancellieri, Claudia.
Published:	Cham :Springer International Publishing : : 2018.,
Description:	xiv, 320 p. :ill., digital ; : 24 cm.;
Contained By:	Springer eBooks
Subject:	Spectrum analysis. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-74989-1
ISBN:	9783319749891

Spectroscopy of complex oxide interfaces = photoemission and related spectroscopies /
Spectroscopy of complex oxide interfacesphotoemission and related spectroscopies /[electronic resource] :edited by Claudia Cancellieri, Vladimir N. Strocov. - Cham :Springer International Publishing :2018. - xiv, 320 p. :ill., digital ;24 cm. - Springer series in materials science,v.2660933-033X ;. - Springer series in materials science ;106..

Introduction -- Growth of TMO Interfaces -- Transport Properties of TMO Interfaces -- Photoemission of Bare TMO Surfaces -- Hard X-ray Photoelectron Spectroscopy -- ARPES of TMO Interfaces -- X-ray Standing Wave Spectroscopy -- Dynamical Effects at the TMO Interfaces -- Ab-initio Calculations of TMO Band Structure -- Interfacial Magnetism -- RIXS on Nickelates -- Conclusions.

This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers - in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.

ISBN: 9783319749891

Standard No.: 10.1007/978-3-319-74989-1doiSubjects--Topical Terms:

582358
Spectrum analysis.

LC Class. No.: QC451 / .S643 2018

Dewey Class. No.: 535.84

Spectroscopy of complex oxide interfaces = photoemission and related spectroscopies /
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245 0 0 $a Spectroscopy of complex oxide interfaces $h [electronic resource] : $b photoemission and related spectroscopies / $c edited by Claudia Cancellieri, Vladimir N. Strocov.
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300 $a xiv, 320 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer series in materials science, $x 0933-033X ; $v v.266
505 0 $a Introduction -- Growth of TMO Interfaces -- Transport Properties of TMO Interfaces -- Photoemission of Bare TMO Surfaces -- Hard X-ray Photoelectron Spectroscopy -- ARPES of TMO Interfaces -- X-ray Standing Wave Spectroscopy -- Dynamical Effects at the TMO Interfaces -- Ab-initio Calculations of TMO Band Structure -- Interfacial Magnetism -- RIXS on Nickelates -- Conclusions.
520 $a This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers - in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.
650 0 $a Spectrum analysis. $3 582358
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650 2 4 $a Spectroscopy and Microscopy. $3 768852
650 2 4 $a Surface and Interface Science, Thin Films. $3 782551
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 671207
650 2 4 $a Optics, Lasers, Photonics, Optical Devices. $3 1112289
700 1 $a Cancellieri, Claudia. $3 1201813
700 1 $a Strocov, Vladimir N. $3 1201814
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