語系:
繁體中文
English
說明(常見問題)
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Epitaxial growth of III-nitride comp...
~
Kangawa, Yoshihiro.
Epitaxial growth of III-nitride compounds = computational approach /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Epitaxial growth of III-nitride compounds/ edited by Takashi Matsuoka, Yoshihiro Kangawa.
其他題名:
computational approach /
其他作者:
Matsuoka, Takashi.
出版者:
Cham :Springer International Publishing : : 2018.,
面頁冊數:
ix, 223 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
標題:
Nitrides. -
電子資源:
http://dx.doi.org/10.1007/978-3-319-76641-6
ISBN:
9783319766416
Epitaxial growth of III-nitride compounds = computational approach /
Epitaxial growth of III-nitride compounds
computational approach /[electronic resource] :edited by Takashi Matsuoka, Yoshihiro Kangawa. - Cham :Springer International Publishing :2018. - ix, 223 p. :ill., digital ;24 cm. - Springer series in materials science,v.2690933-033X ;. - Springer series in materials science ;106..
Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary.
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
ISBN: 9783319766416
Standard No.: 10.1007/978-3-319-76641-6doiSubjects--Topical Terms:
678695
Nitrides.
LC Class. No.: TK7871.15.N57 / E658 2018
Dewey Class. No.: 621.38152
Epitaxial growth of III-nitride compounds = computational approach /
LDR
:02042nam a2200337 a 4500
001
925612
003
DE-He213
005
20181106164240.0
006
m d
007
cr nn 008maaau
008
190625s2018 gw s 0 eng d
020
$a
9783319766416
$q
(electronic bk.)
020
$a
9783319766409
$q
(paper)
024
7
$a
10.1007/978-3-319-76641-6
$2
doi
035
$a
978-3-319-76641-6
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7871.15.N57
$b
E658 2018
072
7
$a
TJFD
$2
bicssc
072
7
$a
TEC021000
$2
bisacsh
072
7
$a
TEC008080
$2
bisacsh
082
0 4
$a
621.38152
$2
23
090
$a
TK7871.15.N57
$b
E64 2018
245
0 0
$a
Epitaxial growth of III-nitride compounds
$h
[electronic resource] :
$b
computational approach /
$c
edited by Takashi Matsuoka, Yoshihiro Kangawa.
260
$a
Cham :
$c
2018.
$b
Springer International Publishing :
$b
Imprint: Springer,
300
$a
ix, 223 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
Springer series in materials science,
$x
0933-033X ;
$v
v.269
505
0
$a
Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary.
520
$a
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
650
0
$a
Nitrides.
$3
678695
650
0
$a
Epitaxy.
$3
901803
650
1 4
$a
Materials Science.
$3
671087
650
2 4
$a
Optical and Electronic Materials.
$3
593919
650
2 4
$a
Semiconductors.
$3
578843
650
2 4
$a
Numerical and Computational Physics, Simulation.
$3
1112293
650
2 4
$a
Surfaces and Interfaces, Thin Films.
$3
671207
650
2 4
$a
Crystallography and Scattering Methods.
$3
1142947
700
1
$a
Matsuoka, Takashi.
$3
1203500
700
1
$a
Kangawa, Yoshihiro.
$3
1203501
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer eBooks
830
0
$a
Springer series in materials science ;
$v
106.
$3
881461
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-76641-6
950
$a
Chemistry and Materials Science (Springer-11644)
筆 0 讀者評論
多媒體
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼[密碼必須為2種組合(英文和數字)及長度為10碼以上]
登入