國立虎尾科技大學 |

Gallium nitride-enabled high frequency and high efficiency power conversion

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Gallium nitride-enabled high frequency and high efficiency power conversion/ edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
其他作者:	Meneghesso, Gaudenzio.
出版者:	Cham :Springer International Publishing : : 2018.,
面頁冊數:	xiii, 232 p. :ill. (some col.), digital ; : 24 cm.;
Contained By:	Springer eBooks
標題:	Semiconductors - Materials. -
電子資源:	http://dx.doi.org/10.1007/978-3-319-77994-2
ISBN:	9783319779942

Gallium nitride-enabled high frequency and high efficiency power conversion
Gallium nitride-enabled high frequency and high efficiency power conversion[electronic resource] /edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. - Cham :Springer International Publishing :2018. - xiii, 232 p. :ill. (some col.), digital ;24 cm. - Integrated circuits and systems,1558-9412. - Integrated circuits and systems..

Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

ISBN: 9783319779942

Standard No.: 10.1007/978-3-319-77994-2doiSubjects--Topical Terms:

673601
Semiconductors
--Materials.

LC Class. No.: TK7871.85 / .G355 2018

Dewey Class. No.: 621.38152

Gallium nitride-enabled high frequency and high efficiency power conversion
LDR:02577nam a2200325 a 4500 001 926398
003 DE-He213
005 20181123105940.0
006 m d
007 cr nn 008maaau
008 190625s2018 gw s 0 eng d
020 $a 9783319779942 $q (electronic bk.)
020 $a 9783319779935 $q (paper)
024 7 $a 10.1007/978-3-319-77994-2 $2 doi
035 $a 978-3-319-77994-2
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.85 $b .G355 2018
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7871.85 $b .G171 2018
245 0 0 $a Gallium nitride-enabled high frequency and high efficiency power conversion $h [electronic resource] / $c edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
260 $a Cham : $c 2018. $b Springer International Publishing : $b Imprint: Springer,
300 $a xiii, 232 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Integrated circuits and systems, $x 1558-9412
505 0 $a Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
520 $a This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
650 0 $a Semiconductors $x Materials. $3 673601
650 0 $a Gallium nitride. $3 713641
650 0 $a Transistors. $3 1091209
650 1 4 $a Engineering. $3 561152
650 2 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Optical and Electronic Materials. $3 593919
700 1 $a Meneghesso, Gaudenzio. $3 1204840
700 1 $a Meneghini, Matteo. $3 1204841
700 1 $a Zanoni, Enrico. $3 1204842
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer eBooks
830 0 $a Integrated circuits and systems. $3 993377
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-77994-2
950 $a Engineering (Springer-11647)