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Formation of KNbO3 thin films for se...
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Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses/ by Tae-Ho Lee.
作者:
Lee, Tae-Ho.
出版者:
Singapore :Springer Singapore : : 2018.,
面頁冊數:
xxi, 98 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
標題:
Thin films - Electric properties. -
電子資源:
https://doi.org/10.1007/978-981-13-2535-9
ISBN:
9789811325359
Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses
Lee, Tae-Ho.
Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses
[electronic resource] /by Tae-Ho Lee. - Singapore :Springer Singapore :2018. - xxi, 98 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..
Abstract -- Figure list -- Table list -- Chapter 1. Introduction -- Chapter 2. Literature Survey -- 2-1. Lead-free Piezoelectric Ceramics -- 2-2. Memristor-based Neuromorphic System -- 2-3. Memristor as Artificial Synapses -- 2-4. Piezoelectric Nanogenerators -- Chapter 3. Experimental Procedure -- 3-1. Preparation of KN Sputtering Target -- 3-2. Experiments of KN Thin Films -- 3-3. KNbO3 ReRAM Devices -- 3-4. KNbO3 Piezoelectric Nanogenerators -- 3-5. Biocompatibility Assessment of KN film -- Chapter 4. Results and Discussion -- 4-1. Growth Behavior of KN Thin Films -- 4-2. KNbO3-Based ReRAM Devices -- 4-3. KNbO3-Based Piezoelectric Nanogenerators -- 4-4. Self powered KNbO3 ReRAM device -- 4-5. KNbO3-based Memristor -- 4-6. Biocompatibility Assessment of KNbO3 Thin films -- Chapter 5. Conclusions -- References.
This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices. However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth. This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.
ISBN: 9789811325359
Standard No.: 10.1007/978-981-13-2535-9doiSubjects--Topical Terms:
641590
Thin films
--Electric properties.
LC Class. No.: TK7871.15.F5
Dewey Class. No.: 621.38152
Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses
LDR
:02744nam a2200349 a 4500
001
928887
003
DE-He213
005
20190311161029.0
006
m d
007
cr nn 008maaau
008
190626s2018 si s 0 eng d
020
$a
9789811325359
$q
(electronic bk.)
020
$a
9789811325342
$q
(paper)
024
7
$a
10.1007/978-981-13-2535-9
$2
doi
035
$a
978-981-13-2535-9
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7871.15.F5
072
7
$a
TGM
$2
bicssc
072
7
$a
TEC021000
$2
bisacsh
072
7
$a
TGM
$2
thema
072
7
$a
PNRX
$2
thema
082
0 4
$a
621.38152
$2
23
090
$a
TK7871.15.F5
$b
L481 2018
100
1
$a
Lee, Tae-Ho.
$3
1209125
245
1 0
$a
Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses
$h
[electronic resource] /
$c
by Tae-Ho Lee.
260
$a
Singapore :
$c
2018.
$b
Springer Singapore :
$b
Imprint: Springer,
300
$a
xxi, 98 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
Springer theses,
$x
2190-5053
505
0
$a
Abstract -- Figure list -- Table list -- Chapter 1. Introduction -- Chapter 2. Literature Survey -- 2-1. Lead-free Piezoelectric Ceramics -- 2-2. Memristor-based Neuromorphic System -- 2-3. Memristor as Artificial Synapses -- 2-4. Piezoelectric Nanogenerators -- Chapter 3. Experimental Procedure -- 3-1. Preparation of KN Sputtering Target -- 3-2. Experiments of KN Thin Films -- 3-3. KNbO3 ReRAM Devices -- 3-4. KNbO3 Piezoelectric Nanogenerators -- 3-5. Biocompatibility Assessment of KN film -- Chapter 4. Results and Discussion -- 4-1. Growth Behavior of KN Thin Films -- 4-2. KNbO3-Based ReRAM Devices -- 4-3. KNbO3-Based Piezoelectric Nanogenerators -- 4-4. Self powered KNbO3 ReRAM device -- 4-5. KNbO3-based Memristor -- 4-6. Biocompatibility Assessment of KNbO3 Thin films -- Chapter 5. Conclusions -- References.
520
$a
This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices. However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth. This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.
650
0
$a
Thin films
$x
Electric properties.
$3
641590
650
0
$a
Thin film devices.
$3
641587
650
0
$a
Crystal growth.
$3
700760
650
0
$a
Random access memory.
$3
680567
650
1 4
$a
Surfaces and Interfaces, Thin Films.
$3
671207
650
2 4
$a
Surface and Interface Science, Thin Films.
$3
782551
650
2 4
$a
Electronic Circuits and Devices.
$3
782968
650
2 4
$a
Circuits and Systems.
$3
670901
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer eBooks
830
0
$a
Springer theses.
$3
831604
856
4 0
$u
https://doi.org/10.1007/978-981-13-2535-9
950
$a
Chemistry and Materials Science (Springer-11644)
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