國立虎尾科技大學 |

登入

回首頁

Quantum Dot Lasers for Silicon Photo...

University of California, Santa Barbara.

Quantum Dot Lasers for Silicon Photonics.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Quantum Dot Lasers for Silicon Photonics./
作者:	Norman, Justin Colby.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
面頁冊數:	205 p.
附註:	Source: Dissertation Abstracts International, Volume: 80-07(E), Section: B.
Contained By:	Dissertation Abstracts International80-07B(E).
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13423538
ISBN:	9780438898578

Quantum Dot Lasers for Silicon Photonics.
Norman, Justin Colby.

Quantum Dot Lasers for Silicon Photonics. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 205 p.

Source: Dissertation Abstracts International, Volume: 80-07(E), Section: B.

Thesis (Ph.D.)--University of California, Santa Barbara, 2018.

Direct epitaxial integration of III-V optoelectronic devices on Si offers a substantial manufacturing cost and scalability advantage over heterogeneous integration via wafer bonding. The challenge in utilizing direct epitaxy of III-Vs on Si is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. As an optical gain medium, quantum dots exhibit a unique tolerance to crystalline defects due to their three-dimensional quantum confined structure.

ISBN: 9780438898578Subjects--Topical Terms:

557839
Materials science.

Quantum Dot Lasers for Silicon Photonics.
LDR:02745nam a2200325 4500 001 931730
005 20190716101637.5
008 190815s2018 ||||||||||||||||| ||eng d
020 $a 9780438898578
035 $a (MiAaPQ)AAI13423538
035 $a (MiAaPQ)ucsb:14194
035 $a AAI13423538
040 $a MiAaPQ $c MiAaPQ
100 1 $a Norman, Justin Colby. $3 1213946
245 1 0 $a Quantum Dot Lasers for Silicon Photonics.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2018
300 $a 205 p.
500 $a Source: Dissertation Abstracts International, Volume: 80-07(E), Section: B.
500 $a Advisers: John E. Bowers; Arthur C. Gossard.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2018.
520 $a Direct epitaxial integration of III-V optoelectronic devices on Si offers a substantial manufacturing cost and scalability advantage over heterogeneous integration via wafer bonding. The challenge in utilizing direct epitaxy of III-Vs on Si is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. As an optical gain medium, quantum dots exhibit a unique tolerance to crystalline defects due to their three-dimensional quantum confined structure.
520 $a Quantum dot lasers epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. Their atom-like, inhomogeneously broadened, discrete density of states yields unique gain properties that show promise for improved performance and new functionalities relative to their quantum well counterparts (even on native substrates). By reducing the dislocation density in III-V/Si material and improving quantum dot size homogeneity, several world record results have been achieved for epitaxial laser performance on silicon.
520 $a A subset of the results achieved include continuous-wave threshold currents below 1 mA in micro-scale ring laser cavities, single-facet output powers of 175 mW at 20 °C, continuous wave lasing up to 105 °C, near zero linewidth enhancement factor, isolator-free stability at optical feedback levels of up to 90%, and record long device lifetimes on silicon of more than 100 years at 35 °C based on extrapolated 8,000-hour aging studies, and > 100,000 h lifetimes at 60 °C from extrapolated 4,000-hour aging studies. These results show potential to revolutionize integrated photonics through economic advantages and performance capabilities not achievable in quantum well lasers.
590 $a School code: 0035.
650 4 $a Materials science. $3 557839
650 4 $a Optics. $3 595336
690 $a 0794
690 $a 0752
710 2 $a University of California, Santa Barbara. $b Materials. $3 1187227
773 0 $t Dissertation Abstracts International $g 80-07B(E).
790 $a 0035
791 $a Ph.D.
792 $a 2018
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13423538

筆 0 讀者評論

多媒體

評論

新增評論分享你的心得

Export

取書館別