國立虎尾科技大學 |

Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy./
作者:	Lang, Andrew Charles.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
面頁冊數:	176 p.
附註:	Source: Dissertation Abstracts International, Volume: 80-06(E), Section: B.
Contained By:	Dissertation Abstracts International80-06B(E).
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13424999
ISBN:	9780438812413

Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy.
Lang, Andrew Charles.

Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 176 p.

Source: Dissertation Abstracts International, Volume: 80-06(E), Section: B.

Thesis (Ph.D.)--Drexel University, 2018.

The maturation of new semiconductor and device technology is dependent upon our understanding of device reliability. Silicon has had the benefit of more than 50 years of science, engineering, and statistics, leading to an incredibly mature and robust material platform. Newer device platforms, like GaN, represent exciting new prospects but their technology has yet to mature to reach Si's level reliability. While the properties of GaN devices exceed those of conventional Si- or GaAs-based devices, widespread adoption of GaN technology has been slow due to insufficient understanding of its reliability and device degradation mechanisms.

ISBN: 9780438812413Subjects--Topical Terms:

557839
Materials science.

Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy.
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520 $a The maturation of new semiconductor and device technology is dependent upon our understanding of device reliability. Silicon has had the benefit of more than 50 years of science, engineering, and statistics, leading to an incredibly mature and robust material platform. Newer device platforms, like GaN, represent exciting new prospects but their technology has yet to mature to reach Si's level reliability. While the properties of GaN devices exceed those of conventional Si- or GaAs-based devices, widespread adoption of GaN technology has been slow due to insufficient understanding of its reliability and device degradation mechanisms.
520 $a This thesis investigates the degradation mechanisms of GaN-based devices using high-resolution electron microscopy. Transmission electron microscopy (TEM) and scanning-TEM (STEM) are combined with spectroscopic techniques including electron energy-loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) to reveal the microstructural evolution of stressed GaN devices.
520 $a Collectively this work illustrates the importance of physical characterization on developing semiconductor systems. While the vast majority of device characterization is driven by electrical characteristics, the microscopic characterization of devices is an excellent complement to traditional techniques.
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