國立虎尾科技大學 |

Language: English

Back to Search results for [ subject:"Surface-Limited Redox Reaction." ]

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) ...

謝于飛

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 =/ 謝于飛.
Reminder of title:	Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement /
remainder title:	Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement.
Author:	謝于飛
Published:	雲林縣 :國立虎尾科技大學 , : 民108.07.,
Description:	[11], 97 面 :圖, 表 ; : 30公分.;
Notes:	指導教授: 方昭訓.
Subject:	Self-Forming Barrier Layer. -
Online resource:	電子資源

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement /
謝于飛

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 =Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement /Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement.謝于飛. - 初版. - 雲林縣 :國立虎尾科技大學 ,民108.07. - [11], 97 面 :圖, 表 ;30公分.

指導教授: 方昭訓.

碩士論文--國立虎尾科技大學材料科學與工程系材料科學與綠色能源工程碩士班.

含參考書目.

(平裝).Subjects--Topical Terms:

1215705
Self-Forming Barrier Layer.

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement /
LDR:01044cam a2200217 i 4500 001 932159
008 191014s2019 ch ak frm 000 0 chi d
035 $a (THES)107NYPI0159008
040 $a NFU $b chi $c NFU $e CCR
041 0 # $a chi $b chi $b eng
084 $a 008.152M $b 0411 108 $2 ncsclt
100 1 $a 謝于飛 $3 1214509
245 1 0 $a 銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = $b Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement / $c 謝于飛.
246 1 1 $a Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民108.07.
300 $a [11], 97 面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 方昭訓.
500 $a 學年度: 107.
502 $a 碩士論文--國立虎尾科技大學材料科學與工程系材料科學與綠色能源工程碩士班.
504 $a 含參考書目.
563 $a (平裝).
650 # 4 $a Self-Forming Barrier Layer. $3 1215705
650 # 4 $a Surface-Limited Redox Reaction. $3 1215704
650 # 4 $a Underpotential Deposition. $3 1215703
650 # 4 $a Cu(Mn) alloy thin film. $3 1215702
650 # 4 $a 自形成阻障層. $3 1150773
650 # 4 $a 表面侷限氧化還原反應. $3 1085079
650 # 4 $a 低電位沉積. $3 1011312
650 # 4 $a Cu(Mn)合金薄膜. $3 1215701
856 7 # $u http://handle.ncl.edu.tw/11296/jxtv6z $z 電子資源 $2 http