語系:
繁體中文
English
說明(常見問題)
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Energy-level control at hybrid inorg...
~
SpringerLink (Online service)
Energy-level control at hybrid inorganic/organic semiconductor interfaces
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Energy-level control at hybrid inorganic/organic semiconductor interfaces/ by Raphael Schlesinger.
作者:
Schlesinger, Raphael.
出版者:
Cham :Springer International Publishing : : 2017.,
面頁冊數:
xviii, 211 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
標題:
Semiconductors - Junctions. -
電子資源:
http://dx.doi.org/10.1007/978-3-319-46624-8
ISBN:
9783319466248
Energy-level control at hybrid inorganic/organic semiconductor interfaces
Schlesinger, Raphael.
Energy-level control at hybrid inorganic/organic semiconductor interfaces
[electronic resource] /by Raphael Schlesinger. - Cham :Springer International Publishing :2017. - xviii, 211 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..
Introduction -- Fundamentals -- Theory of Experimental Methods -- Methodology and Experimental Setups -- Results and Discussion -- Conclusion.
This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
ISBN: 9783319466248
Standard No.: 10.1007/978-3-319-46624-8doiSubjects--Topical Terms:
598324
Semiconductors
--Junctions.
LC Class. No.: QC611.6.J85
Dewey Class. No.: 537.622
Energy-level control at hybrid inorganic/organic semiconductor interfaces
LDR
:02192nam a2200325 a 4500
001
957470
003
DE-He213
005
20161122174927.0
006
m d
007
cr nn 008maaau
008
201118s2017 gw s 0 eng d
020
$a
9783319466248
$q
(electronic bk.)
020
$a
9783319466231
$q
(paper)
024
7
$a
10.1007/978-3-319-46624-8
$2
doi
035
$a
978-3-319-46624-8
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
QC611.6.J85
072
7
$a
PHFC
$2
bicssc
072
7
$a
SCI077000
$2
bisacsh
082
0 4
$a
537.622
$2
23
090
$a
QC611.6.J85
$b
S342 2017
100
1
$a
Schlesinger, Raphael.
$3
1249064
245
1 0
$a
Energy-level control at hybrid inorganic/organic semiconductor interfaces
$h
[electronic resource] /
$c
by Raphael Schlesinger.
260
$a
Cham :
$c
2017.
$b
Springer International Publishing :
$b
Imprint: Springer,
300
$a
xviii, 211 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
Springer theses,
$x
2190-5053
505
0
$a
Introduction -- Fundamentals -- Theory of Experimental Methods -- Methodology and Experimental Setups -- Results and Discussion -- Conclusion.
520
$a
This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
650
0
$a
Semiconductors
$x
Junctions.
$3
598324
650
1 4
$a
Physics.
$3
564049
650
2 4
$a
Surface and Interface Science, Thin Films.
$3
782551
650
2 4
$a
Optical and Electronic Materials.
$3
593919
650
2 4
$a
Spectroscopy and Microscopy.
$3
768852
650
2 4
$a
Semiconductors.
$3
578843
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer eBooks
830
0
$a
Springer theses.
$3
831604
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-46624-8
950
$a
Physics and Astronomy (Springer-11651)
筆 0 讀者評論
多媒體
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼[密碼必須為2種組合(英文和數字)及長度為10碼以上]
登入