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Heavily-Doped 2D-Quantized Structure...
~
Bhattacharya, Sitangshu.
Heavily-Doped 2D-Quantized Structures and the Einstein Relation
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Heavily-Doped 2D-Quantized Structures and the Einstein Relation/ by Kamakhya P. Ghatak, Sitangshu Bhattacharya.
Author:
Ghatak, Kamakhya P.
other author:
Bhattacharya, Sitangshu.
Description:
XL, 347 p. 58 illus.online resource. :
Contained By:
Springer Nature eBook
Subject:
Solid state physics. -
Online resource:
https://doi.org/10.1007/978-3-319-08380-3
ISBN:
9783319083803
Heavily-Doped 2D-Quantized Structures and the Einstein Relation
Ghatak, Kamakhya P.
Heavily-Doped 2D-Quantized Structures and the Einstein Relation
[electronic resource] /by Kamakhya P. Ghatak, Sitangshu Bhattacharya. - 1st ed. 2015. - XL, 347 p. 58 illus.online resource. - Springer Tracts in Modern Physics,2600081-3869 ;. - Springer Tracts in Modern Physics,260.
From the Contents: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The ER in NIPI Structures of HD Non-Parabolic Semiconductors -- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors -- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications -- Conclusion and Scope for Future.
This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
ISBN: 9783319083803
Standard No.: 10.1007/978-3-319-08380-3doiSubjects--Topical Terms:
641431
Solid state physics.
LC Class. No.: QC176-176.9
Dewey Class. No.: 530.41
Heavily-Doped 2D-Quantized Structures and the Einstein Relation
LDR
:03329nam a22004095i 4500
001
960263
003
DE-He213
005
20200705150331.0
007
cr nn 008mamaa
008
201211s2015 gw | s |||| 0|eng d
020
$a
9783319083803
$9
978-3-319-08380-3
024
7
$a
10.1007/978-3-319-08380-3
$2
doi
035
$a
978-3-319-08380-3
050
4
$a
QC176-176.9
072
7
$a
PNFS
$2
bicssc
072
7
$a
SCI077000
$2
bisacsh
072
7
$a
PNFS
$2
thema
082
0 4
$a
530.41
$2
23
100
1
$a
Ghatak, Kamakhya P.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1062349
245
1 0
$a
Heavily-Doped 2D-Quantized Structures and the Einstein Relation
$h
[electronic resource] /
$c
by Kamakhya P. Ghatak, Sitangshu Bhattacharya.
250
$a
1st ed. 2015.
264
1
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2015.
300
$a
XL, 347 p. 58 illus.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
490
1
$a
Springer Tracts in Modern Physics,
$x
0081-3869 ;
$v
260
505
0
$a
From the Contents: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The ER in NIPI Structures of HD Non-Parabolic Semiconductors -- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors -- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications -- Conclusion and Scope for Future.
520
$a
This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
650
0
$a
Solid state physics.
$3
641431
650
0
$a
Nanotechnology.
$3
557660
650
0
$a
Optical materials.
$3
672695
650
0
$a
Electronic materials.
$3
1253592
650
0
$a
Semiconductors.
$3
578843
650
0
$a
Nanoscale science.
$3
1253587
650
0
$a
Nanoscience.
$3
632473
650
0
$a
Nanostructures.
$3
561754
650
1 4
$a
Solid State Physics.
$3
768851
650
2 4
$a
Nanotechnology and Microengineering.
$3
722030
650
2 4
$a
Optical and Electronic Materials.
$3
593919
650
2 4
$a
Nanoscale Science and Technology.
$3
783795
700
1
$a
Bhattacharya, Sitangshu.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
768693
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9783319083810
776
0 8
$i
Printed edition:
$z
9783319083797
776
0 8
$i
Printed edition:
$z
9783319381275
830
0
$a
Springer Tracts in Modern Physics,
$x
0081-3869 ;
$v
260
$3
1254078
856
4 0
$u
https://doi.org/10.1007/978-3-319-08380-3
912
$a
ZDB-2-PHA
912
$a
ZDB-2-SXP
950
$a
Physics and Astronomy (SpringerNature-11651)
950
$a
Physics and Astronomy (R0) (SpringerNature-43715)
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